GaInP/(In)GaAs/Ge multijunction solar cells have been state-of-practice for power generation on spacecraft for over a decade but there are still potential improvements for endof-life (EOL) efficiency. Radiative coupling between GaInP and (In)GaAs subcells is not typically considered in the EOL design of space solar cells because radiative recombination in the GaInP is effectively quenched by radiation-induced damage. This paper shows that quantum well structures incorporated into a GaInP subcell may be less sensitive to radiation damage, thereby enabling radiative coupling between subcells at EOL and providing a current boost in the (In)GaAs subcell to improve EOL efficiency.
|Title of host publication||2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||5|
|Publication status||Published - 2019 Jun|
|Event||46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States|
Duration: 2019 Jun 16 → 2019 Jun 21
|Name||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Conference||46th IEEE Photovoltaic Specialists Conference, PVSC 2019|
|Period||19/6/16 → 19/6/21|
Bibliographical noteFunding Information:
This work was funded by the Air Force Research Laboratory – Space Vehicles Directorate. Many thanks to Alex Haas for his valuable conversations.
© 2019 IEEE.
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering