Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications

Dong Soo Yoon, Jun Cheol Bae, Sung Man Lee, Hong Koo Baik

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of the amount of RuO2 added in the Pt film on the electrical properties of the deposited Pt-RuO2 film on the n2+-poly-Si substrate by using metal mask of 500 m m dot in size were investigated at the temperature range of 500-700 °C in air. When the Pt film was prepared without RuO2 addition, it showed the higher total resistance and nonlinear characteristics, attributed to the oxidized layer at the Pt/n2+-poly-Si interface formed by reaction between the indiffused oxygen through Pt grain boundaries and Si during annealing in air. The Pt layer fabricated by RuO2 incorporation exhibited the lower total resistance and ohmic behavior up to 700 °C and suppressed the reaction of Pt-silicide up to 800 °C. in the latter case, the incorporation of ruthenium dioxide (RuO2) into the Pt bottom electrode layer led to the retardation of the interdiffusion of oxygen, Si, and Pt up to 700 °C, resulting from RuO2 stuffing effect in the polycrystalline Pt film. Consequently, this implies that the RuO2-stuffed Pt layer is expected to perform as a bottom electrode as well as diffusion barrier.

Original languageEnglish
Pages (from-to)373-376
Number of pages4
JournalElectrochemical and Solid-State Letters
Volume3
Issue number8
DOIs
Publication statusPublished - 2000 Aug 1

Fingerprint

Diffusion barriers
capacitors
Capacitors
Electrodes
electrodes
Polysilicon
Oxygen
air
oxygen
Air
Ruthenium
dioxides
ruthenium
Masks
Grain boundaries
Electric properties
masks
grain boundaries
Metals
electrical properties

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications",
abstract = "The effects of the amount of RuO2 added in the Pt film on the electrical properties of the deposited Pt-RuO2 film on the n2+-poly-Si substrate by using metal mask of 500 m m dot in size were investigated at the temperature range of 500-700 °C in air. When the Pt film was prepared without RuO2 addition, it showed the higher total resistance and nonlinear characteristics, attributed to the oxidized layer at the Pt/n2+-poly-Si interface formed by reaction between the indiffused oxygen through Pt grain boundaries and Si during annealing in air. The Pt layer fabricated by RuO2 incorporation exhibited the lower total resistance and ohmic behavior up to 700 °C and suppressed the reaction of Pt-silicide up to 800 °C. in the latter case, the incorporation of ruthenium dioxide (RuO2) into the Pt bottom electrode layer led to the retardation of the interdiffusion of oxygen, Si, and Pt up to 700 °C, resulting from RuO2 stuffing effect in the polycrystalline Pt film. Consequently, this implies that the RuO2-stuffed Pt layer is expected to perform as a bottom electrode as well as diffusion barrier.",
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Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications. / Yoon, Dong Soo; Bae, Jun Cheol; Lee, Sung Man; Baik, Hong Koo.

In: Electrochemical and Solid-State Letters, Vol. 3, No. 8, 01.08.2000, p. 373-376.

Research output: Contribution to journalArticle

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AB - The effects of the amount of RuO2 added in the Pt film on the electrical properties of the deposited Pt-RuO2 film on the n2+-poly-Si substrate by using metal mask of 500 m m dot in size were investigated at the temperature range of 500-700 °C in air. When the Pt film was prepared without RuO2 addition, it showed the higher total resistance and nonlinear characteristics, attributed to the oxidized layer at the Pt/n2+-poly-Si interface formed by reaction between the indiffused oxygen through Pt grain boundaries and Si during annealing in air. The Pt layer fabricated by RuO2 incorporation exhibited the lower total resistance and ohmic behavior up to 700 °C and suppressed the reaction of Pt-silicide up to 800 °C. in the latter case, the incorporation of ruthenium dioxide (RuO2) into the Pt bottom electrode layer led to the retardation of the interdiffusion of oxygen, Si, and Pt up to 700 °C, resulting from RuO2 stuffing effect in the polycrystalline Pt film. Consequently, this implies that the RuO2-stuffed Pt layer is expected to perform as a bottom electrode as well as diffusion barrier.

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