In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solution-processed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed. The experimental results showed that the increased addition of Sr to the IZO system resulted in suppression of carrier generation. Additionally, as the annealing temperature was increased from 300 to 500 °C, the TFT showed increased performance. At optimized conditions (20 at%, 500 °C, 2 h) for SIZO TFTs, we achieved a saturation mobility of 0.34 cm2/Vs, an on/off ratio of 4.54×106, a threshold voltage of 3.25 V, and a subthreshold swing of 0.61 V/decade.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) through a National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. R0A-2007-000-10044-0(2007) ].
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry