Investigation of the bonding states of the SiO2 aerogel film/metal interface

Sang Bae Jung, Hyung-Ho Park, Haecheon Kim

Research output: Contribution to journalConference article

22 Citations (Scopus)

Abstract

Due to a rapid decrease in the physical dimensions of today's microelectronic devices, the RC-time-delay of the interconnection is now a serious problem. As a possible plan, lower resistive metal or lower dielectric constant material has to be introduced. For a low dielectric constant material, SiO2 aerogel may be a promising candidate for an interlayer dielectric (ILD) due to its relatively small dielectric constant. However, the formation of a SiO2 aerogel film on metal substrate may induce a modification of the metal surface because the aerogel film is made by the sol-gel process. Thus, this investigation focused on the interface formation of SiO2 aerogel film and substrate metal is important for the application of low-k material. It was revealed that aluminum silicate bond during aging of spun-on film was induced at the interface with Al and oxidized Al bond was increased after supercritical drying. Copper silicate bond was formed at the interface of the aged film and maintained after fabrication of SiO2 aerogel film. Cu(OH)2 bond, which did not exist at the Cu surface, was generated during film fabrication process. Measurement of leakage current of SiO2 aerogel film deposited on various substrates indicated the degradation of material property in Al/SiO2 aerogel/Cu structure.

Original languageEnglish
Pages (from-to)575-579
Number of pages5
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

Aerogels
aerogels
metal films
Metals
Permittivity
permittivity
Silicates
Aluminum Silicates
Substrates
aluminum silicates
metals
Fabrication
fabrication
sol-gel processes
microelectronics
Microelectronics
Leakage currents
Sol-gel process
drying
metal surfaces

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Jung, Sang Bae ; Park, Hyung-Ho ; Kim, Haecheon. / Investigation of the bonding states of the SiO2 aerogel film/metal interface. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 575-579.
@article{06a14e585d964c79a5541b80166a7d67,
title = "Investigation of the bonding states of the SiO2 aerogel film/metal interface",
abstract = "Due to a rapid decrease in the physical dimensions of today's microelectronic devices, the RC-time-delay of the interconnection is now a serious problem. As a possible plan, lower resistive metal or lower dielectric constant material has to be introduced. For a low dielectric constant material, SiO2 aerogel may be a promising candidate for an interlayer dielectric (ILD) due to its relatively small dielectric constant. However, the formation of a SiO2 aerogel film on metal substrate may induce a modification of the metal surface because the aerogel film is made by the sol-gel process. Thus, this investigation focused on the interface formation of SiO2 aerogel film and substrate metal is important for the application of low-k material. It was revealed that aluminum silicate bond during aging of spun-on film was induced at the interface with Al and oxidized Al bond was increased after supercritical drying. Copper silicate bond was formed at the interface of the aged film and maintained after fabrication of SiO2 aerogel film. Cu(OH)2 bond, which did not exist at the Cu surface, was generated during film fabrication process. Measurement of leakage current of SiO2 aerogel film deposited on various substrates indicated the degradation of material property in Al/SiO2 aerogel/Cu structure.",
author = "Jung, {Sang Bae} and Hyung-Ho Park and Haecheon Kim",
year = "2004",
month = "1",
day = "30",
doi = "10.1016/j.tsf.2003.07.019",
language = "English",
volume = "447-448",
pages = "575--579",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Investigation of the bonding states of the SiO2 aerogel film/metal interface. / Jung, Sang Bae; Park, Hyung-Ho; Kim, Haecheon.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 575-579.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Investigation of the bonding states of the SiO2 aerogel film/metal interface

AU - Jung, Sang Bae

AU - Park, Hyung-Ho

AU - Kim, Haecheon

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Due to a rapid decrease in the physical dimensions of today's microelectronic devices, the RC-time-delay of the interconnection is now a serious problem. As a possible plan, lower resistive metal or lower dielectric constant material has to be introduced. For a low dielectric constant material, SiO2 aerogel may be a promising candidate for an interlayer dielectric (ILD) due to its relatively small dielectric constant. However, the formation of a SiO2 aerogel film on metal substrate may induce a modification of the metal surface because the aerogel film is made by the sol-gel process. Thus, this investigation focused on the interface formation of SiO2 aerogel film and substrate metal is important for the application of low-k material. It was revealed that aluminum silicate bond during aging of spun-on film was induced at the interface with Al and oxidized Al bond was increased after supercritical drying. Copper silicate bond was formed at the interface of the aged film and maintained after fabrication of SiO2 aerogel film. Cu(OH)2 bond, which did not exist at the Cu surface, was generated during film fabrication process. Measurement of leakage current of SiO2 aerogel film deposited on various substrates indicated the degradation of material property in Al/SiO2 aerogel/Cu structure.

AB - Due to a rapid decrease in the physical dimensions of today's microelectronic devices, the RC-time-delay of the interconnection is now a serious problem. As a possible plan, lower resistive metal or lower dielectric constant material has to be introduced. For a low dielectric constant material, SiO2 aerogel may be a promising candidate for an interlayer dielectric (ILD) due to its relatively small dielectric constant. However, the formation of a SiO2 aerogel film on metal substrate may induce a modification of the metal surface because the aerogel film is made by the sol-gel process. Thus, this investigation focused on the interface formation of SiO2 aerogel film and substrate metal is important for the application of low-k material. It was revealed that aluminum silicate bond during aging of spun-on film was induced at the interface with Al and oxidized Al bond was increased after supercritical drying. Copper silicate bond was formed at the interface of the aged film and maintained after fabrication of SiO2 aerogel film. Cu(OH)2 bond, which did not exist at the Cu surface, was generated during film fabrication process. Measurement of leakage current of SiO2 aerogel film deposited on various substrates indicated the degradation of material property in Al/SiO2 aerogel/Cu structure.

UR - http://www.scopus.com/inward/record.url?scp=1342302423&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1342302423&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.07.019

DO - 10.1016/j.tsf.2003.07.019

M3 - Conference article

VL - 447-448

SP - 575

EP - 579

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -