Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

M. H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, D. H. Ko, J. H. Lee, J. H. Gu, N. I. Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.

Original languageEnglish
Pages (from-to)L75-L80
JournalSurface Science
Volume554
Issue number1
DOIs
Publication statusPublished - 2004 Apr 1

Fingerprint

Annealing
annealing
Silicates
Temperature
silicates
Vacuum
vacuum
Core levels
Atomic layer deposition
Ultrahigh vacuum
atomic layer epitaxy
Binding energy
Thick films
Electron energy levels
ultrahigh vacuum
thick films
Thermodynamic stability
thermal stability
X ray photoelectron spectroscopy
binding energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Cho, M. H., Chang, H. S., Cho, Y. J., Moon, D. W., Min, K. H., Sinclair, R., ... Lee, N. I. (2004). Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing. Surface Science, 554(1), L75-L80. https://doi.org/10.1016/j.susc.2004.01.058
Cho, M. H. ; Chang, H. S. ; Cho, Y. J. ; Moon, D. W. ; Min, K. H. ; Sinclair, R. ; Kang, S. K. ; Ko, D. H. ; Lee, J. H. ; Gu, J. H. ; Lee, N. I. / Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing. In: Surface Science. 2004 ; Vol. 554, No. 1. pp. L75-L80.
@article{ce813ed82c6e48acb294136b3843a8b8,
title = "Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing",
abstract = "Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 {\AA} thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.",
author = "Cho, {M. H.} and Chang, {H. S.} and Cho, {Y. J.} and Moon, {D. W.} and Min, {K. H.} and R. Sinclair and Kang, {S. K.} and Ko, {D. H.} and Lee, {J. H.} and Gu, {J. H.} and Lee, {N. I.}",
year = "2004",
month = "4",
day = "1",
doi = "10.1016/j.susc.2004.01.058",
language = "English",
volume = "554",
pages = "L75--L80",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1",

}

Cho, MH, Chang, HS, Cho, YJ, Moon, DW, Min, KH, Sinclair, R, Kang, SK, Ko, DH, Lee, JH, Gu, JH & Lee, NI 2004, 'Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing', Surface Science, vol. 554, no. 1, pp. L75-L80. https://doi.org/10.1016/j.susc.2004.01.058

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing. / Cho, M. H.; Chang, H. S.; Cho, Y. J.; Moon, D. W.; Min, K. H.; Sinclair, R.; Kang, S. K.; Ko, D. H.; Lee, J. H.; Gu, J. H.; Lee, N. I.

In: Surface Science, Vol. 554, No. 1, 01.04.2004, p. L75-L80.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

AU - Cho, M. H.

AU - Chang, H. S.

AU - Cho, Y. J.

AU - Moon, D. W.

AU - Min, K. H.

AU - Sinclair, R.

AU - Kang, S. K.

AU - Ko, D. H.

AU - Lee, J. H.

AU - Gu, J. H.

AU - Lee, N. I.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.

AB - Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.

UR - http://www.scopus.com/inward/record.url?scp=12144289927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12144289927&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2004.01.058

DO - 10.1016/j.susc.2004.01.058

M3 - Article

AN - SCOPUS:12144289927

VL - 554

SP - L75-L80

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1

ER -