Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film

Tae Jung Ha, Hyung Ho Park, Sang Bae Jung, Hojun Ryu, Byoung Gon Yu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment. HMDS treatment substituted {single bond}OH with {single bond}Si(CH3)3 groups on the silica surface. After treatment, ordered mesoporous silica films were calcined at various calcination temperatures, and the calcination temperature to obtain optimal structural, electrical, and mechanical properties was determined to be approximately 300 °C.

Original languageEnglish
Pages (from-to)186-190
Number of pages5
JournalJournal of Colloid and Interface Science
Volume326
Issue number1
DOIs
Publication statusPublished - 2008 Oct 1

Fingerprint

Silicon Dioxide
Calcination
Silica
Permittivity
Temperature
Mechanical properties
Block copolymers
Integrated circuits
Structural properties
Electric properties
hexamethylsilazane
Polymers
single bond

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Colloid and Surface Chemistry

Cite this

Ha, Tae Jung ; Park, Hyung Ho ; Jung, Sang Bae ; Ryu, Hojun ; Yu, Byoung Gon. / Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film. In: Journal of Colloid and Interface Science. 2008 ; Vol. 326, No. 1. pp. 186-190.
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Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film. / Ha, Tae Jung; Park, Hyung Ho; Jung, Sang Bae; Ryu, Hojun; Yu, Byoung Gon.

In: Journal of Colloid and Interface Science, Vol. 326, No. 1, 01.10.2008, p. 186-190.

Research output: Contribution to journalArticle

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AB - To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment. HMDS treatment substituted {single bond}OH with {single bond}Si(CH3)3 groups on the silica surface. After treatment, ordered mesoporous silica films were calcined at various calcination temperatures, and the calcination temperature to obtain optimal structural, electrical, and mechanical properties was determined to be approximately 300 °C.

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