We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.
Bibliographical noteFunding Information:
This work was supported by Samsung Advanced Institute of Technology and also partly supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)