Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Gun Hee Kim; Woong Hee Jeong; Byung Du Ahn; Hyun Soo Shin; Hee Jin Kim; Hyun Jae Kim; Myung Kwan Ryu; Kyung Bae Park; Jong Baek Seon; Sang Yoon Lee

doi:10.1063/1.3413939

Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Gun Hee Kim, Woong Hee Jeong, Byung Du Ahn, Hyun Soo Shin, Hee Jin Kim, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

136 Citations (Scopus)

Abstract

We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, E_opt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in E_opt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.

Original language	English
Article number	163506
Journal	Applied Physics Letters
Volume	96
Issue number	16
DOIs	https://doi.org/10.1063/1.3413939
Publication status	Published - 2010 Apr 19

Bibliographical note

Funding Information:
This work was supported by Samsung Advanced Institute of Technology and also partly supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors",

abstract = "We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.",

author = "Kim, {Gun Hee} and Jeong, {Woong Hee} and {Du Ahn}, Byung and Shin, {Hyun Soo} and Kim, {Hee Jin} and Kim, {Hyun Jae} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Seon, {Jong Baek} and Lee, {Sang Yoon}",

note = "Funding Information: This work was supported by Samsung Advanced Institute of Technology and also partly supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).",

year = "2010",

month = apr,

day = "19",

doi = "10.1063/1.3413939",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors. / Kim, Gun Hee; Jeong, Woong Hee; Du Ahn, Byung; Shin, Hyun Soo; Kim, Hee Jin; Kim, Hyun Jae; Ryu, Myung Kwan; Park, Kyung Bae; Seon, Jong Baek; Lee, Sang Yoon.

In: Applied Physics Letters, Vol. 96, No. 16, 163506, 19.04.2010.

Research output: Contribution to journal › Article › peer-review

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AU - Kim, Gun Hee

AU - Jeong, Woong Hee

AU - Du Ahn, Byung

AU - Shin, Hyun Soo

AU - Kim, Hee Jin

AU - Kim, Hyun Jae

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Lee, Sang Yoon

N1 - Funding Information: This work was supported by Samsung Advanced Institute of Technology and also partly supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).

PY - 2010/4/19

Y1 - 2010/4/19

N2 - We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.

AB - We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.

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Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Abstract

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