Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Gun Hee Kim, Woong Hee Jeong, Byung Du Ahn, Hyun Soo Shin, Hee Jin Kim, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

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Abstract

We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.

Original languageEnglish
Article number163506
JournalApplied Physics Letters
Volume96
Issue number16
DOIs
Publication statusPublished - 2010 Apr 19

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, G. H., Jeong, W. H., Du Ahn, B., Shin, H. S., Kim, H. J., Kim, H. J., Ryu, M. K., Park, K. B., Seon, J. B., & Lee, S. Y. (2010). Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors. Applied Physics Letters, 96(16), [163506]. https://doi.org/10.1063/1.3413939