Abstract
LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.
| Original language | English |
|---|---|
| Article number | 33.2 |
| Pages (from-to) | 1258-1261 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 36 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2005 |
| Event | 2005 SID International Symposium - Boston, MA, United States Duration: 2005 May 25 → 2005 May 27 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
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Cite this
Yin, H., Xianyu, W., Jung, J., Cho, H., Kim, D., Park, K., Kwon, J., & Noguchi, T. (2005). Investigation of the fin-like TFT structure in LTPS devices. Digest of Technical Papers - SID International Symposium, 36(1), 1258-1261. [33.2]. https://doi.org/10.1889/1.2036232