Investigation of the fin-like TFT structure in LTPS devices

Huaxiang Yin; Wenxu Xianyu; Jisim Jung; Hans Cho; Doyoung Kim; Kyungbae Park; Jangyeon Kwon; T. Noguchi

doi:10.1889/1.2036232

Investigation of the fin-like TFT structure in LTPS devices

Huaxiang Yin, Wenxu Xianyu, Jisim Jung, Hans Cho, Doyoung Kim, Kyungbae Park, Jangyeon Kwon, T. Noguchi

School of Integrated Technology

Research output: Contribution to journal › Conference article

2 Citations (Scopus)

Abstract

LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high T_Si/W_Si ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.

Original language	English
Article number	33.2
Pages (from-to)	1258-1261
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	1
DOIs	https://doi.org/10.1889/1.2036232
Publication status	Published - 2005 Jan 1
Event	2005 SID International Symposium - Boston, MA, United States Duration: 2005 May 25 → 2005 May 27

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All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Yin, H., Xianyu, W., Jung, J., Cho, H., Kim, D., Park, K., Kwon, J., & Noguchi, T. (2005). Investigation of the fin-like TFT structure in LTPS devices. Digest of Technical Papers - SID International Symposium, 36(1), 1258-1261. [33.2]. https://doi.org/10.1889/1.2036232

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AU - Park, Kyungbae

AU - Kwon, Jangyeon

AU - Noguchi, T.

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AB - LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.

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Access to Document

10.1889/1.2036232