Abstract
LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.
| Original language | English |
|---|---|
| Article number | 33.2 |
| Pages (from-to) | 1258-1261 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 36 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2005 Dec 1 |
| Event | 2005 SID International Symposium - Boston, MA, United States Duration: 2005 May 25 → 2005 May 27 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Investigation of the fin-like TFT structure in LTPS devices. / Yin, Huaxiang; Xianyu, Wenxu; Jung, Jisim; Cho, Hans; Kim, Doyoung; Park, Kyungbae; Kwon, Jang-Yeon; Noguchi, T.
In: Digest of Technical Papers - SID International Symposium, Vol. 36, No. 2, 33.2, 01.12.2005, p. 1258-1261.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Investigation of the fin-like TFT structure in LTPS devices
AU - Yin, Huaxiang
AU - Xianyu, Wenxu
AU - Jung, Jisim
AU - Cho, Hans
AU - Kim, Doyoung
AU - Park, Kyungbae
AU - Kwon, Jang-Yeon
AU - Noguchi, T.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.
AB - LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.
UR - http://www.scopus.com/inward/record.url?scp=32244443960&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=32244443960&partnerID=8YFLogxK
U2 - 10.1889/1.2036232
DO - 10.1889/1.2036232
M3 - Conference article
AN - SCOPUS:32244443960
VL - 36
SP - 1258
EP - 1261
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
SN - 0097-966X
IS - 2
M1 - 33.2
ER -