Investigation of the fin-like TFT structure in LTPS devices

Huaxiang Yin; Wenxu Xianyu; Jisim Jung; Hans Cho; Doyoung Kim; Kyungbae Park; Jangyeon Kwon; T. Noguchi

doi:10.1889/1.2036232

Investigation of the fin-like TFT structure in LTPS devices

Huaxiang Yin, Wenxu Xianyu, Jisim Jung, Hans Cho, Doyoung Kim, Kyungbae Park, Jangyeon Kwon, T. Noguchi

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high T_Si/W_Si ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.

Original language	English
Article number	33.2
Pages (from-to)	1258-1261
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	1
DOIs	https://doi.org/10.1889/1.2036232
Publication status	Published - 2005
Event	2005 SID International Symposium - Boston, MA, United States Duration: 2005 May 25 → 2005 May 27

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1889/1.2036232

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title = "Investigation of the fin-like TFT structure in LTPS devices",

abstract = "LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.",

author = "Huaxiang Yin and Wenxu Xianyu and Jisim Jung and Hans Cho and Doyoung Kim and Kyungbae Park and Jangyeon Kwon and T. Noguchi",

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pages = "1258--1261",

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T1 - Investigation of the fin-like TFT structure in LTPS devices

AU - Yin, Huaxiang

AU - Xianyu, Wenxu

AU - Jung, Jisim

AU - Cho, Hans

AU - Kim, Doyoung

AU - Park, Kyungbae

AU - Kwon, Jangyeon

AU - Noguchi, T.

PY - 2005

Y1 - 2005

N2 - LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.

AB - LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.

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U2 - 10.1889/1.2036232

DO - 10.1889/1.2036232

M3 - Conference article

AN - SCOPUS:32244443960

VL - 36

SP - 1258

EP - 1261

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - 1

M1 - 33.2

T2 - 2005 SID International Symposium

Y2 - 25 May 2005 through 27 May 2005

ER -

Investigation of the fin-like TFT structure in LTPS devices

Abstract

All Science Journal Classification (ASJC) codes

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