Investigation of the fin-like TFT structure in LTPS devices

Huaxiang Yin, Wenxu Xianyu, Jisim Jung, Hans Cho, Doyoung Kim, Kyungbae Park, Jangyeon Kwon, T. Noguchi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.

Original languageEnglish
Article number33.2
Pages (from-to)1258-1261
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume36
Issue number1
DOIs
Publication statusPublished - 2005
Event2005 SID International Symposium - Boston, MA, United States
Duration: 2005 May 252005 May 27

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Yin, H., Xianyu, W., Jung, J., Cho, H., Kim, D., Park, K., Kwon, J., & Noguchi, T. (2005). Investigation of the fin-like TFT structure in LTPS devices. Digest of Technical Papers - SID International Symposium, 36(1), 1258-1261. [33.2]. https://doi.org/10.1889/1.2036232