TY - JOUR
T1 - Investigation of the fin-like TFT structure in LTPS devices
AU - Yin, Huaxiang
AU - Xianyu, Wenxu
AU - Jung, Jisim
AU - Cho, Hans
AU - Kim, Doyoung
AU - Park, Kyungbae
AU - Kwon, Jangyeon
AU - Noguchi, T.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.
AB - LTPS TFTs realized with 3D Fin-like multiple-channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.
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U2 - 10.1889/1.2036232
DO - 10.1889/1.2036232
M3 - Conference article
AN - SCOPUS:32244443960
VL - 36
SP - 1258
EP - 1261
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
SN - 0097-966X
IS - 1
M1 - 33.2
T2 - 2005 SID International Symposium
Y2 - 25 May 2005 through 27 May 2005
ER -