Investigation of the initial stage of growth of Hf O2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering

Hyo Sik Chang, Hyunsang Hwang, Mann-Ho Cho, Dae Won Moon

Research output: Contribution to journalArticle

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Abstract

The initial stage of growth of Hf O2 films on p -type Si(100) grown by atomic-layer deposition (ALD) was investigated using in situ medium energy ion scattering (MEIS). The interaction between adsorbed Hf Cl4 molecules and the oxidized Si surface was examined as a function of growth cycles. The results clearly show that island-like growth occurs during the initial Hf O2 growth and the islands are then merged into a continuous atomic layer with an increase in ALD cycles. The morphology of thicker Hf O2 films remained essentially unchanged with growth cycles. Interfacial reactions between Hf and Si during the initial growth stage were minimal. As a result, the effect of insufficient nucleation density is a dominant factor in the initial stage of growth of hafnium oxide on the oxidized Si substrate, resulting in nonlinear growth behavior.

Original languageEnglish
Article number031906
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
Publication statusPublished - 2005 Jan 17

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ion scattering
atomic layer epitaxy
energy
cycles
hafnium oxides
nucleation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The initial stage of growth of Hf O2 films on p -type Si(100) grown by atomic-layer deposition (ALD) was investigated using in situ medium energy ion scattering (MEIS). The interaction between adsorbed Hf Cl4 molecules and the oxidized Si surface was examined as a function of growth cycles. The results clearly show that island-like growth occurs during the initial Hf O2 growth and the islands are then merged into a continuous atomic layer with an increase in ALD cycles. The morphology of thicker Hf O2 films remained essentially unchanged with growth cycles. Interfacial reactions between Hf and Si during the initial growth stage were minimal. As a result, the effect of insufficient nucleation density is a dominant factor in the initial stage of growth of hafnium oxide on the oxidized Si substrate, resulting in nonlinear growth behavior.",
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Investigation of the initial stage of growth of Hf O2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering. / Chang, Hyo Sik; Hwang, Hyunsang; Cho, Mann-Ho; Moon, Dae Won.

In: Applied Physics Letters, Vol. 86, No. 3, 031906, 17.01.2005, p. 1-3.

Research output: Contribution to journalArticle

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AU - Chang, Hyo Sik

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AU - Moon, Dae Won

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AB - The initial stage of growth of Hf O2 films on p -type Si(100) grown by atomic-layer deposition (ALD) was investigated using in situ medium energy ion scattering (MEIS). The interaction between adsorbed Hf Cl4 molecules and the oxidized Si surface was examined as a function of growth cycles. The results clearly show that island-like growth occurs during the initial Hf O2 growth and the islands are then merged into a continuous atomic layer with an increase in ALD cycles. The morphology of thicker Hf O2 films remained essentially unchanged with growth cycles. Interfacial reactions between Hf and Si during the initial growth stage were minimal. As a result, the effect of insufficient nucleation density is a dominant factor in the initial stage of growth of hafnium oxide on the oxidized Si substrate, resulting in nonlinear growth behavior.

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