Investigation of the interface oxide of Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs (100) surfaces

Young Dae Cho, Dong Chan Suh, Yongshik Lee, Dae Hong Ko, Kwun Bum Chung, Mann Ho Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The physical and the electrical properties of ALD Al2O 3 / HfO2 and HfO2 / Al2O3 stacks on GaAs systems before after heat treatment are investigated. Results reveal that the addition of Al2O3 layers suppresses not only the poly-crystallization of HfO2 even after heat treatment, but also the formation of interfacial oxide. High-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) analysis results are presented.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages311-314
Number of pages4
Edition1
DOIs
Publication statusPublished - 2010 Dec 30
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 262010 Apr 27

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/4/2610/4/27

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Cho, Y. D., Suh, D. C., Lee, Y., Ko, D. H., Chung, K. B., & Cho, M. H. (2010). Investigation of the interface oxide of Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs (100) surfaces. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 311-314). (ECS Transactions; Vol. 28, No. 1). https://doi.org/10.1149/1.3375616