Investigation of the properties of Ba-substituted La0.7Sr 0.3-x Bax MnO3 perovskite manganite films for resistive switching applications

Sun Gyu Choi, Hong Sub Lee, Geun Young Yeom, Hyung Ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

La0.7Sr0.3-x Bax MnO3 (LSBMO: x = 0.09, 0.18, and 0.27) thin films were prepared on Pt-coated Si substrates using a radiofrequency magnetron sputtering technique at a substrate heating temperature of 450 C. The effects of varying the amount of substituted Ba 2+ on the physical, chemical, and electrical properties of the perovskite manganite films were systematically investigated. X-Ray diffraction showed that the growth orientation and crystallinity of films were not affected by the amount of substituted Ba cations. Raman spectroscopy was used to determine the tilt of MnO6 octahedra and the Jahn-Teller-type distortion variation of the manganite films. The change in covalent characteristics of Mn-O bonds with increasing amounts of Ba2+ substituent was analyzed by x-ray photoelectron spectroscopy, specifically to examine the effects of bond characteristics on the resistive switching properties of LSBMO. The resistance of the LSBMO films increased with increasing Ba2+ content due to an increase in the covalent nature of Mn-O bonds. The resistive switching ratio increased with increasing Ba2+ amount, and relationships among resistive switching, Jahn-Teller distortion, and Mn-O bond character of LSBMO films were interpreted.

Original languageEnglish
Pages (from-to)1196-1201
Number of pages6
JournalJournal of Electronic Materials
Volume42
Issue number6
DOIs
Publication statusPublished - 2013 Jun 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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