La0.7Sr0.3-x Bax MnO3 (LSBMO: x = 0.09, 0.18, and 0.27) thin films were prepared on Pt-coated Si substrates using a radiofrequency magnetron sputtering technique at a substrate heating temperature of 450 C. The effects of varying the amount of substituted Ba 2+ on the physical, chemical, and electrical properties of the perovskite manganite films were systematically investigated. X-Ray diffraction showed that the growth orientation and crystallinity of films were not affected by the amount of substituted Ba cations. Raman spectroscopy was used to determine the tilt of MnO6 octahedra and the Jahn-Teller-type distortion variation of the manganite films. The change in covalent characteristics of Mn-O bonds with increasing amounts of Ba2+ substituent was analyzed by x-ray photoelectron spectroscopy, specifically to examine the effects of bond characteristics on the resistive switching properties of LSBMO. The resistance of the LSBMO films increased with increasing Ba2+ content due to an increase in the covalent nature of Mn-O bonds. The resistive switching ratio increased with increasing Ba2+ amount, and relationships among resistive switching, Jahn-Teller distortion, and Mn-O bond character of LSBMO films were interpreted.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10041926, Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea).Experiments at PLS were supported in part by MEST and POSTECH.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry