Investigation of the properties of Ba-substituted La0.7Sr 0.3-x Bax MnO3 perovskite manganite films for resistive switching applications

Sun Gyu Choi, Hong Sub Lee, Geun Young Yeom, Hyung Ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

La0.7Sr0.3-x Bax MnO3 (LSBMO: x = 0.09, 0.18, and 0.27) thin films were prepared on Pt-coated Si substrates using a radiofrequency magnetron sputtering technique at a substrate heating temperature of 450 C. The effects of varying the amount of substituted Ba 2+ on the physical, chemical, and electrical properties of the perovskite manganite films were systematically investigated. X-Ray diffraction showed that the growth orientation and crystallinity of films were not affected by the amount of substituted Ba cations. Raman spectroscopy was used to determine the tilt of MnO6 octahedra and the Jahn-Teller-type distortion variation of the manganite films. The change in covalent characteristics of Mn-O bonds with increasing amounts of Ba2+ substituent was analyzed by x-ray photoelectron spectroscopy, specifically to examine the effects of bond characteristics on the resistive switching properties of LSBMO. The resistance of the LSBMO films increased with increasing Ba2+ content due to an increase in the covalent nature of Mn-O bonds. The resistive switching ratio increased with increasing Ba2+ amount, and relationships among resistive switching, Jahn-Teller distortion, and Mn-O bond character of LSBMO films were interpreted.

Original languageEnglish
Pages (from-to)1196-1201
Number of pages6
JournalJournal of Electronic Materials
Volume42
Issue number6
DOIs
Publication statusPublished - 2013 Jun 1

Fingerprint

Perovskite
Jahn-Teller effect
Substrates
Photoelectron spectroscopy
chemical properties
Magnetron sputtering
Chemical properties
x ray spectroscopy
Raman spectroscopy
Cations
crystallinity
magnetron sputtering
Electric properties
Physical properties
physical properties
Positive ions
electrical properties
perovskite
manganite
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{f53cb00c9b3f47589e8e55fce4caa09f,
title = "Investigation of the properties of Ba-substituted La0.7Sr 0.3-x Bax MnO3 perovskite manganite films for resistive switching applications",
abstract = "La0.7Sr0.3-x Bax MnO3 (LSBMO: x = 0.09, 0.18, and 0.27) thin films were prepared on Pt-coated Si substrates using a radiofrequency magnetron sputtering technique at a substrate heating temperature of 450 C. The effects of varying the amount of substituted Ba 2+ on the physical, chemical, and electrical properties of the perovskite manganite films were systematically investigated. X-Ray diffraction showed that the growth orientation and crystallinity of films were not affected by the amount of substituted Ba cations. Raman spectroscopy was used to determine the tilt of MnO6 octahedra and the Jahn-Teller-type distortion variation of the manganite films. The change in covalent characteristics of Mn-O bonds with increasing amounts of Ba2+ substituent was analyzed by x-ray photoelectron spectroscopy, specifically to examine the effects of bond characteristics on the resistive switching properties of LSBMO. The resistance of the LSBMO films increased with increasing Ba2+ content due to an increase in the covalent nature of Mn-O bonds. The resistive switching ratio increased with increasing Ba2+ amount, and relationships among resistive switching, Jahn-Teller distortion, and Mn-O bond character of LSBMO films were interpreted.",
author = "Choi, {Sun Gyu} and Lee, {Hong Sub} and Yeom, {Geun Young} and Park, {Hyung Ho}",
year = "2013",
month = "6",
day = "1",
doi = "10.1007/s11664-013-2556-5",
language = "English",
volume = "42",
pages = "1196--1201",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

Investigation of the properties of Ba-substituted La0.7Sr 0.3-x Bax MnO3 perovskite manganite films for resistive switching applications. / Choi, Sun Gyu; Lee, Hong Sub; Yeom, Geun Young; Park, Hyung Ho.

In: Journal of Electronic Materials, Vol. 42, No. 6, 01.06.2013, p. 1196-1201.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of the properties of Ba-substituted La0.7Sr 0.3-x Bax MnO3 perovskite manganite films for resistive switching applications

AU - Choi, Sun Gyu

AU - Lee, Hong Sub

AU - Yeom, Geun Young

AU - Park, Hyung Ho

PY - 2013/6/1

Y1 - 2013/6/1

N2 - La0.7Sr0.3-x Bax MnO3 (LSBMO: x = 0.09, 0.18, and 0.27) thin films were prepared on Pt-coated Si substrates using a radiofrequency magnetron sputtering technique at a substrate heating temperature of 450 C. The effects of varying the amount of substituted Ba 2+ on the physical, chemical, and electrical properties of the perovskite manganite films were systematically investigated. X-Ray diffraction showed that the growth orientation and crystallinity of films were not affected by the amount of substituted Ba cations. Raman spectroscopy was used to determine the tilt of MnO6 octahedra and the Jahn-Teller-type distortion variation of the manganite films. The change in covalent characteristics of Mn-O bonds with increasing amounts of Ba2+ substituent was analyzed by x-ray photoelectron spectroscopy, specifically to examine the effects of bond characteristics on the resistive switching properties of LSBMO. The resistance of the LSBMO films increased with increasing Ba2+ content due to an increase in the covalent nature of Mn-O bonds. The resistive switching ratio increased with increasing Ba2+ amount, and relationships among resistive switching, Jahn-Teller distortion, and Mn-O bond character of LSBMO films were interpreted.

AB - La0.7Sr0.3-x Bax MnO3 (LSBMO: x = 0.09, 0.18, and 0.27) thin films were prepared on Pt-coated Si substrates using a radiofrequency magnetron sputtering technique at a substrate heating temperature of 450 C. The effects of varying the amount of substituted Ba 2+ on the physical, chemical, and electrical properties of the perovskite manganite films were systematically investigated. X-Ray diffraction showed that the growth orientation and crystallinity of films were not affected by the amount of substituted Ba cations. Raman spectroscopy was used to determine the tilt of MnO6 octahedra and the Jahn-Teller-type distortion variation of the manganite films. The change in covalent characteristics of Mn-O bonds with increasing amounts of Ba2+ substituent was analyzed by x-ray photoelectron spectroscopy, specifically to examine the effects of bond characteristics on the resistive switching properties of LSBMO. The resistance of the LSBMO films increased with increasing Ba2+ content due to an increase in the covalent nature of Mn-O bonds. The resistive switching ratio increased with increasing Ba2+ amount, and relationships among resistive switching, Jahn-Teller distortion, and Mn-O bond character of LSBMO films were interpreted.

UR - http://www.scopus.com/inward/record.url?scp=84877765979&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877765979&partnerID=8YFLogxK

U2 - 10.1007/s11664-013-2556-5

DO - 10.1007/s11664-013-2556-5

M3 - Article

AN - SCOPUS:84877765979

VL - 42

SP - 1196

EP - 1201

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -