Investigation of the surface modification for Ru and RuOx films using a post-treatment method for high-dielectric applications

Dong Soo Yoon, Jae Sung Roh, Sung Man Lee, Hong Koo Baik

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1 Citation (Scopus)

Abstract

The effect of post-treatment on the surface modification for Ru and RuOx films was investigated. The surface morphology of Ru film oxidized by N2O plasma was observed to be much smoother than that by rapid thermal oxidation. In particular, the leakage current property of the Ru film oxidized by N2O plasma was significantly improved due to suppression of heterogeneous grain growth and the Ru-O bonds formed. After post-treatment, otherwise, oxygen is fully diffused through the RuOx layer, producing a porous amorphous microstructure. In addition, the barrier properties for the Ru/TiN/poly-Si/Si contact system are better than that for the RuOx/TiN/poly-Si/Si contact system. Therefore, N2 plasma oxidation can be suggested as a post-treatment method and the Ru film can be proposed as a bottom electrode to improve the electrical properties of dielectric film at the dielectric film/Ru bottom electrode interface.

Original languageEnglish
Pages (from-to)511-519
Number of pages9
JournalJournal of Materials Science: Materials in Electronics
Volume14
Issue number8
DOIs
Publication statusPublished - 2003 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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