Investigation of thermal measurement variables in high power GaN-based LEDs

Lianqiao Yang, Jianzheng Hu, Moo Whan Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper we report on the effects of variables in thermal resistance measurement of high power GaN-based light-emitting diodes (LEDs). The investigated variables include ambient temperature, thermal interface material (TIMs) at different pressure. The combination of transient thermal measurement method and optical measurement was employed for the study. The measured thermal resistance of LED packages was found to increase with the ambient temperature. The temperature dependence of optical efficiency, forward voltage, and thermal properties of packaging materials are thought to be responsible for the increase of thermal resistance with the ambient temperature. The interface effect on the thermal resistance was studied by applying different external pressure on the interface with different TIMs. And the measured thermal resistances were found to reach stabilization at certain pressure level after initial decrease with the external applied pressure.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Pages483-486
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
Publication statusPublished - 2007 Jan 1
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 2006 Sep 102006 Sep 14

Publication series

NameSolid State Phenomena
NumberPART 1
Volume124-126
ISSN (Print)1012-0394

Other

OtherIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
CountryKorea, Republic of
CityJeju
Period06/9/1006/9/14

Fingerprint

Thermal variables measurement
thermal resistance
Heat resistance
Light emitting diodes
light emitting diodes
ambient temperature
Temperature
Packaging materials
optical measurement
packaging
Thermodynamic properties
Stabilization
thermodynamic properties
stabilization
temperature dependence
Electric potential
electric potential
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Yang, L., Hu, J., & Shin, M. W. (2007). Investigation of thermal measurement variables in high power GaN-based LEDs. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 483-486). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd.
Yang, Lianqiao ; Hu, Jianzheng ; Shin, Moo Whan. / Investigation of thermal measurement variables in high power GaN-based LEDs. Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. pp. 483-486 (Solid State Phenomena; PART 1).
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abstract = "In this paper we report on the effects of variables in thermal resistance measurement of high power GaN-based light-emitting diodes (LEDs). The investigated variables include ambient temperature, thermal interface material (TIMs) at different pressure. The combination of transient thermal measurement method and optical measurement was employed for the study. The measured thermal resistance of LED packages was found to increase with the ambient temperature. The temperature dependence of optical efficiency, forward voltage, and thermal properties of packaging materials are thought to be responsible for the increase of thermal resistance with the ambient temperature. The interface effect on the thermal resistance was studied by applying different external pressure on the interface with different TIMs. And the measured thermal resistances were found to reach stabilization at certain pressure level after initial decrease with the external applied pressure.",
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Yang, L, Hu, J & Shin, MW 2007, Investigation of thermal measurement variables in high power GaN-based LEDs. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 124-126, Trans Tech Publications Ltd, pp. 483-486, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 06/9/10.

Investigation of thermal measurement variables in high power GaN-based LEDs. / Yang, Lianqiao; Hu, Jianzheng; Shin, Moo Whan.

Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 483-486 (Solid State Phenomena; Vol. 124-126, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this paper we report on the effects of variables in thermal resistance measurement of high power GaN-based light-emitting diodes (LEDs). The investigated variables include ambient temperature, thermal interface material (TIMs) at different pressure. The combination of transient thermal measurement method and optical measurement was employed for the study. The measured thermal resistance of LED packages was found to increase with the ambient temperature. The temperature dependence of optical efficiency, forward voltage, and thermal properties of packaging materials are thought to be responsible for the increase of thermal resistance with the ambient temperature. The interface effect on the thermal resistance was studied by applying different external pressure on the interface with different TIMs. And the measured thermal resistances were found to reach stabilization at certain pressure level after initial decrease with the external applied pressure.

AB - In this paper we report on the effects of variables in thermal resistance measurement of high power GaN-based light-emitting diodes (LEDs). The investigated variables include ambient temperature, thermal interface material (TIMs) at different pressure. The combination of transient thermal measurement method and optical measurement was employed for the study. The measured thermal resistance of LED packages was found to increase with the ambient temperature. The temperature dependence of optical efficiency, forward voltage, and thermal properties of packaging materials are thought to be responsible for the increase of thermal resistance with the ambient temperature. The interface effect on the thermal resistance was studied by applying different external pressure on the interface with different TIMs. And the measured thermal resistances were found to reach stabilization at certain pressure level after initial decrease with the external applied pressure.

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M3 - Conference contribution

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Yang L, Hu J, Shin MW. Investigation of thermal measurement variables in high power GaN-based LEDs. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 ed. Trans Tech Publications Ltd. 2007. p. 483-486. (Solid State Phenomena; PART 1).