Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer

Sang Min Jung, Chang Taek Lee, Moo Whan Shin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this paper, we report on a novel V-Ti/Al/Ni/Au metal stack as an Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer. The thin vanadium layer (10 nm) is employed as the first layer under the conventional Ti/Al/Ni/Au contact. This layer is shown to play a crucial role in achieving low specific contact resistance (ρc) and smooth surface morphology. The V-Ti/Al/Ni/Au contact exhibits significantly improved surface roughness when compared with Ti/Al/Ni/Au contacts with a root mean square value of 11 nm. The specific contact resistivity is measured to be 2.3 × 10-6 Ω cm2. According to cross-sectional transmission electron microscopy (TEM) analysis, very limited reaction is observed between the V-Ti/Al/Ni/Au contact and the AlGaN surface. It is demonstrated that the thin vanadium layer prevents excessive formation of TiN protrusions, which is considered to be the key to improving surface morphology with low contact resistance.

Original languageEnglish
Article number075012
JournalSemiconductor Science and Technology
Volume30
Issue number7
DOIs
Publication statusPublished - 2015 Jul 1

Fingerprint

Vanadium
Ohmic contacts
Contact resistance
caps
Surface morphology
Heterojunctions
electric contacts
Surface roughness
Metals
Transmission electron microscopy
contact resistance
vanadium
mean square values
aluminum gallium nitride
surface roughness
transmission electron microscopy
electrical resistivity
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "In this paper, we report on a novel V-Ti/Al/Ni/Au metal stack as an Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer. The thin vanadium layer (10 nm) is employed as the first layer under the conventional Ti/Al/Ni/Au contact. This layer is shown to play a crucial role in achieving low specific contact resistance (ρc) and smooth surface morphology. The V-Ti/Al/Ni/Au contact exhibits significantly improved surface roughness when compared with Ti/Al/Ni/Au contacts with a root mean square value of 11 nm. The specific contact resistivity is measured to be 2.3 × 10-6 Ω cm2. According to cross-sectional transmission electron microscopy (TEM) analysis, very limited reaction is observed between the V-Ti/Al/Ni/Au contact and the AlGaN surface. It is demonstrated that the thin vanadium layer prevents excessive formation of TiN protrusions, which is considered to be the key to improving surface morphology with low contact resistance.",
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Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer. / Jung, Sang Min; Lee, Chang Taek; Shin, Moo Whan.

In: Semiconductor Science and Technology, Vol. 30, No. 7, 075012, 01.07.2015.

Research output: Contribution to journalArticle

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