Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer

Sang Min Jung, Chang Taek Lee, Moo Whan Shin

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8 Citations (Scopus)

Abstract

In this paper, we report on a novel V-Ti/Al/Ni/Au metal stack as an Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer. The thin vanadium layer (10 nm) is employed as the first layer under the conventional Ti/Al/Ni/Au contact. This layer is shown to play a crucial role in achieving low specific contact resistance (ρc) and smooth surface morphology. The V-Ti/Al/Ni/Au contact exhibits significantly improved surface roughness when compared with Ti/Al/Ni/Au contacts with a root mean square value of 11 nm. The specific contact resistivity is measured to be 2.3 × 10-6 Ω cm2. According to cross-sectional transmission electron microscopy (TEM) analysis, very limited reaction is observed between the V-Ti/Al/Ni/Au contact and the AlGaN surface. It is demonstrated that the thin vanadium layer prevents excessive formation of TiN protrusions, which is considered to be the key to improving surface morphology with low contact resistance.

Original languageEnglish
Article number075012
JournalSemiconductor Science and Technology
Volume30
Issue number7
DOIs
Publication statusPublished - 2015 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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