Abstract
An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 272-275 |
| Number of pages | 4 |
| Journal | Microelectronics Journal |
| Volume | 40 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2009 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
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Investigation on doping behavior of copper in ZnO thin film. / Kim, Gun Hee; Kim, Dong Lim; Ahn, Byung Du; Lee, Sang Yeol; Kim, Hyun Jae.
In: Microelectronics Journal, Vol. 40, No. 2, 01.02.2009, p. 272-275.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation on doping behavior of copper in ZnO thin film
AU - Kim, Gun Hee
AU - Kim, Dong Lim
AU - Ahn, Byung Du
AU - Lee, Sang Yeol
AU - Kim, Hyun Jae
PY - 2009/2/1
Y1 - 2009/2/1
N2 - An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively.
AB - An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively.
UR - http://www.scopus.com/inward/record.url?scp=58749083370&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=58749083370&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2008.07.057
DO - 10.1016/j.mejo.2008.07.057
M3 - Article
AN - SCOPUS:58749083370
VL - 40
SP - 272
EP - 275
JO - Microelectronics Journal
JF - Microelectronics Journal
SN - 0959-8324
IS - 2
ER -