Investigation on doping behavior of copper in ZnO thin film

Gun Hee Kim; Dong Lim Kim; Byung Du Ahn; Sang Yeol Lee; Hyun Jae Kim

doi:10.1016/j.mejo.2008.07.057

Investigation on doping behavior of copper in ZnO thin film

Gun Hee Kim, Dong Lim Kim, Byung Du Ahn, Sang Yeol Lee, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu⁰)-related Cu 2p_3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, Cu_Zn¹⁺-related peak and small Cu_Zn²⁺-related satellite peak exhibited and the optical acceptor binding energies of Cu3d⁹ and Cu3d¹⁰ were 173 and 213 meV, respectively.

Original language	English
Pages (from-to)	272-275
Number of pages	4
Journal	Microelectronics Journal
Volume	40
Issue number	2
DOIs	https://doi.org/10.1016/j.mejo.2008.07.057
Publication status	Published - 2009 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2008.07.057

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title = "Investigation on doping behavior of copper in ZnO thin film",

abstract = "An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively.",

author = "Kim, {Gun Hee} and Kim, {Dong Lim} and Ahn, {Byung Du} and Lee, {Sang Yeol} and Kim, {Hyun Jae}",

year = "2009",

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doi = "10.1016/j.mejo.2008.07.057",

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volume = "40",

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journal = "Microelectronics Journal",

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T1 - Investigation on doping behavior of copper in ZnO thin film

AU - Kim, Gun Hee

AU - Kim, Dong Lim

AU - Ahn, Byung Du

AU - Lee, Sang Yeol

AU - Kim, Hyun Jae

PY - 2009/2

Y1 - 2009/2

N2 - An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively.

AB - An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively.

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JO - Microelectronics Journal

JF - Microelectronics Journal

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Investigation on doping behavior of copper in ZnO thin film

Abstract

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