Investigation on doping behavior of copper in ZnO thin film

Gun Hee Kim, Dong Lim Kim, Byung Du Ahn, Sang Yeol Lee, Hyun Jae Kim

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalMicroelectronics Journal
Volume40
Issue number2
DOIs
Publication statusPublished - 2009 Feb 1

Fingerprint

Copper
Doping (additives)
Thin films
copper
thin films
Binding energy
Photoluminescence
X ray photoelectron spectroscopy
Gases
Satellites
Oxygen
Atoms
Crystals
gas pressure
binding energy
photoelectron spectroscopy
photoluminescence
Experiments
oxygen
matrices

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Kim, Gun Hee ; Kim, Dong Lim ; Ahn, Byung Du ; Lee, Sang Yeol ; Kim, Hyun Jae. / Investigation on doping behavior of copper in ZnO thin film. In: Microelectronics Journal. 2009 ; Vol. 40, No. 2. pp. 272-275.
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Investigation on doping behavior of copper in ZnO thin film. / Kim, Gun Hee; Kim, Dong Lim; Ahn, Byung Du; Lee, Sang Yeol; Kim, Hyun Jae.

In: Microelectronics Journal, Vol. 40, No. 2, 01.02.2009, p. 272-275.

Research output: Contribution to journalArticle

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