Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Won Jun Park; Hyun Soo Shin; Byung Du Ahn; Gun Hee Kim; Seung Min Lee; Kyung Ho Kim; Hyun Jae Kim

doi:10.1063/1.2976309

Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Won Jun Park, Hyun Soo Shin, Byung Du Ahn, Gun Hee Kim, Seung Min Lee, Kyung Ho Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

123 Citations (Scopus)

Abstract

Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [GaZn (%)]. A field-effect mobility of 1.63 cm2 V s and a drain current on/off ratio of 4.17× 106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.

Original language	English
Article number	083508
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2976309
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0 (2007)].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2976309

Cite this

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title = "Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor",

abstract = "Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [GaZn (%)]. A field-effect mobility of 1.63 cm2 V s and a drain current on/off ratio of 4.17× 106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.",

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note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0 (2007)].",

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doi = "10.1063/1.2976309",

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T1 - Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

AU - Park, Won Jun

AU - Shin, Hyun Soo

AU - Ahn, Byung Du

AU - Kim, Gun Hee

AU - Lee, Seung Min

AU - Kim, Kyung Ho

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0 (2007)].

PY - 2008

Y1 - 2008

N2 - Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [GaZn (%)]. A field-effect mobility of 1.63 cm2 V s and a drain current on/off ratio of 4.17× 106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.

AB - Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [GaZn (%)]. A field-effect mobility of 1.63 cm2 V s and a drain current on/off ratio of 4.17× 106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.

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Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Abstract

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