Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [GaZn (%)]. A field-effect mobility of 1.63 cm2 V s and a drain current on/off ratio of 4.17× 106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0 (2007)].
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)