Investigation on I-V characteristics of current induced metal insulator transition in VO2 device

Gi Yong Lee, Howon Kim, Bongjin Simon Mun, Changwoo Park, Honglyoul Ju

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The I-V characteristics of two terminal planar VO2 film devices are investigated as the devices undergo the current induced metal insulator transition (I-MIT). The I-MIT occured when the device resistivity reached ∼7 Ωcm, where metallic grains formed initial conductive current path within insulating matrix. The transition time needed for the I-MIT increased with increasing external resistance, REXT, connected to the device in series, i.e. ∼390 μs (REXT = 5 kΩ) to ∼1400 μs (REXT = 20 kΩ). The transition time is closely related to the RC time delay from capacitance discharge of the VO2 device. During the I-MIT, the amount of discharge current was estimated as large as ∼100 mA, which was larger than the current just before the I-MIT. After the I-MIT, the current density decreased from 1.1 × 106 A/cm2 to 6.5 × 105 A/cm2, suggesting a large temperature changes up to ∼300 °C.

Original languageEnglish
Pages (from-to)1444-1449
Number of pages6
JournalCurrent Applied Physics
Volume17
Issue number11
DOIs
Publication statusPublished - 2017 Nov 1

Fingerprint

Metal insulator transition
Induced currents
insulators
metals
Time delay
Current density
Capacitance
time lag
capacitance
current density
electrical resistivity
matrices

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Lee, Gi Yong ; Kim, Howon ; Mun, Bongjin Simon ; Park, Changwoo ; Ju, Honglyoul. / Investigation on I-V characteristics of current induced metal insulator transition in VO2 device. In: Current Applied Physics. 2017 ; Vol. 17, No. 11. pp. 1444-1449.
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abstract = "The I-V characteristics of two terminal planar VO2 film devices are investigated as the devices undergo the current induced metal insulator transition (I-MIT). The I-MIT occured when the device resistivity reached ∼7 Ωcm, where metallic grains formed initial conductive current path within insulating matrix. The transition time needed for the I-MIT increased with increasing external resistance, REXT, connected to the device in series, i.e. ∼390 μs (REXT = 5 kΩ) to ∼1400 μs (REXT = 20 kΩ). The transition time is closely related to the RC time delay from capacitance discharge of the VO2 device. During the I-MIT, the amount of discharge current was estimated as large as ∼100 mA, which was larger than the current just before the I-MIT. After the I-MIT, the current density decreased from 1.1 × 106 A/cm2 to 6.5 × 105 A/cm2, suggesting a large temperature changes up to ∼300 °C.",
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Investigation on I-V characteristics of current induced metal insulator transition in VO2 device. / Lee, Gi Yong; Kim, Howon; Mun, Bongjin Simon; Park, Changwoo; Ju, Honglyoul.

In: Current Applied Physics, Vol. 17, No. 11, 01.11.2017, p. 1444-1449.

Research output: Contribution to journalArticle

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