Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

Joonseok Yoon; Howon Kim; Bongjin Simon Mun; Changwoo Park; Honglyoul Ju

doi:10.1063/1.4944605

Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

Joonseok Yoon, Howon Kim, Bongjin Simon Mun, Changwoo Park, Honglyoul Ju

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO₂) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO₂. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO₂ can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.

Original language	English
Article number	124503
Journal	Journal of Applied Physics
Volume	119
Issue number	12
DOIs	https://doi.org/10.1063/1.4944605
Publication status	Published - 2016 Mar 28

Bibliographical note

Funding Information:
H. L. Ju and B. S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean government (MOE) (NRF-2015R1D1A1A01059297 and NRF-2015R1A2A2A01004084). Part of this work was supported by the SRC program through the NRF funded by the MOE (NRF-2015R1A5A1009962). This work was supported by the "GRI (GIST Research Institute)" Project through a grant provided by GIST in 2016. B.S. Mun would like to thank support from Korea Basic Science Institute Research Grant (E35800). H. L. Ju thanks Yonsei University for financial support during a 2015 sabbatical leave.

Publisher Copyright:
© 2016 AIP Publishing LLC.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide",

abstract = "The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO2) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO2. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO2 can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.",

author = "Joonseok Yoon and Howon Kim and Mun, {Bongjin Simon} and Changwoo Park and Honglyoul Ju",

note = "Funding Information: H. L. Ju and B. S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean government (MOE) (NRF-2015R1D1A1A01059297 and NRF-2015R1A2A2A01004084). Part of this work was supported by the SRC program through the NRF funded by the MOE (NRF-2015R1A5A1009962). This work was supported by the {"}GRI (GIST Research Institute){"} Project through a grant provided by GIST in 2016. B.S. Mun would like to thank support from Korea Basic Science Institute Research Grant (E35800). H. L. Ju thanks Yonsei University for financial support during a 2015 sabbatical leave. Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

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AU - Park, Changwoo

AU - Ju, Honglyoul

N1 - Funding Information: H. L. Ju and B. S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean government (MOE) (NRF-2015R1D1A1A01059297 and NRF-2015R1A2A2A01004084). Part of this work was supported by the SRC program through the NRF funded by the MOE (NRF-2015R1A5A1009962). This work was supported by the "GRI (GIST Research Institute)" Project through a grant provided by GIST in 2016. B.S. Mun would like to thank support from Korea Basic Science Institute Research Grant (E35800). H. L. Ju thanks Yonsei University for financial support during a 2015 sabbatical leave. Publisher Copyright: © 2016 AIP Publishing LLC.

PY - 2016/3/28

Y1 - 2016/3/28

N2 - The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO2) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO2. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO2 can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.

AB - The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO2) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO2. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO2 can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.

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Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

Abstract

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