Investigation on the compositionally graded HfxAl yOz films for TiN based DRAM capacitor

Deok Sin Kil, Kwon Hong, Seung Jin Yeom, Han Sang Song, Ki Seon Park, Jae Sung Roh, Noh Jung Kwak, Hyun Cheol Sohn, Jin Woong Kim, Sung Wook Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

New concept of capacitor dielectric thin film was successfully demonstrated through graded HfxAlyOz dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded HfxAlyOz dielectric films showed drastically reduced leakage current and highly improved break down voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3Å and leakage current could be maintained as low as 1E -16A/cell at +1.0V.

Original languageEnglish
Title of host publicationProceedings of ESSDERC 2005
Subtitle of host publication35th European Solid-State Device Research Conference
Pages371-374
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
EventESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
Duration: 2005 Sep 122005 Sep 16

Publication series

NameProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume2005

Other

OtherESSDERC 2005: 35th European Solid-State Device Research Conference
CountryFrance
CityGrenoble
Period05/9/1205/9/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kil, D. S., Hong, K., Yeom, S. J., Song, H. S., Park, K. S., Roh, J. S., Kwak, N. J., Sohn, H. C., Kim, J. W., & Park, S. W. (2005). Investigation on the compositionally graded HfxAl yOz films for TiN based DRAM capacitor. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 371-374). [1546662] (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546662