Investigation on the effect of silicon doping in Sb2Te3 phase change materials

Su Bin An, Jin Hwan Jeong, Doo Jin Choi

Research output: Contribution to journalArticle

Abstract

The crystallization behavior and physical properties of Si-doped Sb2Te3(Si: ST) materials applicable to phase change random access memory (PCRAM) was studied with the purpose of overcoming their current weaknesses regarding use in PCRAM. Phase change materials were prepared by DC magnetron sputtering. Si-doped Sb2Te3materials have anSb2Te3(ST) rhombohedral structure regardless of Si content and a segregated region consisting of Si was founded. The Si amorphous phase located at grain boundaries interrupted grain growth, therefore the grain size became smaller. These crystal structures and their bonding characteristics were confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Increasing the amount of Si in Sb2Te3 increased the sheet resistance, crystallization temperature (Tc) and crystallization activation energy (Ea), which was confirmed by a 4-point probe measurement. Furthermore, Metal-Insulator-Metal (MIM) devices based on ST and Si : ST were fabricated and the measured threshold voltage (Vth) of Si: ST was higher than ST. These results showed that Si doping improved thermal stability.

Original languageEnglish
Pages (from-to)560-564
Number of pages5
JournalJournal of Ceramic Processing Research
Volume16
Issue number5
Publication statusPublished - 2015 Jan 1

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Phase change materials
Silicon
Crystallization
Doping (additives)
MIM devices
Data storage equipment
Sheet resistance
Grain growth
Threshold voltage
Magnetron sputtering
Grain boundaries
Thermodynamic stability
X ray photoelectron spectroscopy
Activation energy
Physical properties
Crystal structure
Transmission electron microscopy
X ray diffraction
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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abstract = "The crystallization behavior and physical properties of Si-doped Sb2Te3(Si: ST) materials applicable to phase change random access memory (PCRAM) was studied with the purpose of overcoming their current weaknesses regarding use in PCRAM. Phase change materials were prepared by DC magnetron sputtering. Si-doped Sb2Te3materials have anSb2Te3(ST) rhombohedral structure regardless of Si content and a segregated region consisting of Si was founded. The Si amorphous phase located at grain boundaries interrupted grain growth, therefore the grain size became smaller. These crystal structures and their bonding characteristics were confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Increasing the amount of Si in Sb2Te3 increased the sheet resistance, crystallization temperature (Tc) and crystallization activation energy (Ea), which was confirmed by a 4-point probe measurement. Furthermore, Metal-Insulator-Metal (MIM) devices based on ST and Si : ST were fabricated and the measured threshold voltage (Vth) of Si: ST was higher than ST. These results showed that Si doping improved thermal stability.",
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Investigation on the effect of silicon doping in Sb2Te3 phase change materials. / An, Su Bin; Jeong, Jin Hwan; Choi, Doo Jin.

In: Journal of Ceramic Processing Research, Vol. 16, No. 5, 01.01.2015, p. 560-564.

Research output: Contribution to journalArticle

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