Investigation on the interfacial reaction of SiO 2 /Ti 0.1 W 0.9 system

Hyung-Ho Park, Sahn Nahm, Kyung Soo Suh, Jong Lam Lee, Kyoung Ik Cho, Kyung Soo Kim, Sin Chong Park, Jae Sung Lee, Yong Hyun Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The thermal behavior of antifusing device characteristic with SiO 2 /Ti 0.1 W 0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO 3 . Annealing above 600°C induces decomposition of SiO 2 and results in failure of the antifusing device characteristic.

Original languageEnglish
Pages (from-to)149-155
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume187
DOIs
Publication statusPublished - 1995 Jan 1

Fingerprint

Surface chemistry
Annealing
Decomposition
Tungsten
decomposition
annealing
Heat treatment
destruction
tungsten
heat treatment
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Park, Hyung-Ho ; Nahm, Sahn ; Suh, Kyung Soo ; Lee, Jong Lam ; Cho, Kyoung Ik ; Kim, Kyung Soo ; Park, Sin Chong ; Lee, Jae Sung ; Lee, Yong Hyun. / Investigation on the interfacial reaction of SiO 2 /Ti 0.1 W 0.9 system In: Journal of Non-Crystalline Solids. 1995 ; Vol. 187. pp. 149-155.
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abstract = "The thermal behavior of antifusing device characteristic with SiO 2 /Ti 0.1 W 0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO 3 . Annealing above 600°C induces decomposition of SiO 2 and results in failure of the antifusing device characteristic.",
author = "Hyung-Ho Park and Sahn Nahm and Suh, {Kyung Soo} and Lee, {Jong Lam} and Cho, {Kyoung Ik} and Kim, {Kyung Soo} and Park, {Sin Chong} and Lee, {Jae Sung} and Lee, {Yong Hyun}",
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Park, H-H, Nahm, S, Suh, KS, Lee, JL, Cho, KI, Kim, KS, Park, SC, Lee, JS & Lee, YH 1995, ' Investigation on the interfacial reaction of SiO 2 /Ti 0.1 W 0.9 system ', Journal of Non-Crystalline Solids, vol. 187, pp. 149-155. https://doi.org/10.1016/0022-3093(95)00128-X

Investigation on the interfacial reaction of SiO 2 /Ti 0.1 W 0.9 system . / Park, Hyung-Ho; Nahm, Sahn; Suh, Kyung Soo; Lee, Jong Lam; Cho, Kyoung Ik; Kim, Kyung Soo; Park, Sin Chong; Lee, Jae Sung; Lee, Yong Hyun.

In: Journal of Non-Crystalline Solids, Vol. 187, 01.01.1995, p. 149-155.

Research output: Contribution to journalArticle

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AU - Park, Hyung-Ho

AU - Nahm, Sahn

AU - Suh, Kyung Soo

AU - Lee, Jong Lam

AU - Cho, Kyoung Ik

AU - Kim, Kyung Soo

AU - Park, Sin Chong

AU - Lee, Jae Sung

AU - Lee, Yong Hyun

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AB - The thermal behavior of antifusing device characteristic with SiO 2 /Ti 0.1 W 0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO 3 . Annealing above 600°C induces decomposition of SiO 2 and results in failure of the antifusing device characteristic.

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