Investigation on the interfacial reaction of SiO2/Ti0.1 W0.9 system

Hyung Ho Park, Sahn Nahm, Kyung Soo Suh, Jong Lam Lee, Kyoung Ik Cho, Kyung Soo Kim, Sin Chong Park, Jae Sung Lee, Yong Hyun Lee

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The thermal behavior of antifusing device characteristic with SiO2/Ti0.1 W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600°C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.

Original languageEnglish
Pages (from-to)149-155
Number of pages7
JournalJournal of Non-Crystalline Solids
Publication statusPublished - 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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    Park, H. H., Nahm, S., Suh, K. S., Lee, J. L., Cho, K. I., Kim, K. S., Park, S. C., Lee, J. S., & Lee, Y. H. (1995). Investigation on the interfacial reaction of SiO2/Ti0.1 W0.9 system. Journal of Non-Crystalline Solids, 187, 149-155.