Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

Suehye Park; Edward Namkyu Cho; Ilgu Yun

doi:10.1016/j.sse.2012.04.029

Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

Suehye Park, Edward Namkyu Cho, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ _FE), and unit channel length resistance (r _ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN _X, SiO _X, and SiO _X/SiN _X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ _FE values due to the relatively large r _ch values.

Original language	English
Pages (from-to)	93-96
Number of pages	4
Journal	Solid-State Electronics
Volume	75
DOIs	https://doi.org/10.1016/j.sse.2012.04.029
Publication status	Published - 2012 Sep

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.",

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AB - The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.

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