Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

Suehye Park, Edward Namkyu Cho, Ilgu Yun

Research output: Contribution to journalArticle

7 Citations (Scopus)


The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalSolid-State Electronics
Publication statusPublished - 2012 Sep 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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