Abstract
The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.
| Original language | English |
|---|---|
| Pages (from-to) | 93-96 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 75 |
| DOIs | |
| Publication status | Published - 2012 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors. / Park, Suehye; Cho, Edward Namkyu; Yun, Ilgu.
In: Solid-State Electronics, Vol. 75, 01.09.2012, p. 93-96.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors
AU - Park, Suehye
AU - Cho, Edward Namkyu
AU - Yun, Ilgu
PY - 2012/9/1
Y1 - 2012/9/1
N2 - The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.
AB - The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.
UR - http://www.scopus.com/inward/record.url?scp=84863312310&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863312310&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2012.04.029
DO - 10.1016/j.sse.2012.04.029
M3 - Article
AN - SCOPUS:84863312310
VL - 75
SP - 93
EP - 96
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
ER -