Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

Suehye Park, Edward Namkyu Cho, Ilgu Yun

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalSolid-State Electronics
Volume75
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

Amorphous films
Thin film transistors
transistors
thin films
insulators
Electric properties
electrical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{76bf8fbfc2114c5a86daa62cc3190a82,
title = "Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors",
abstract = "The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.",
author = "Suehye Park and Cho, {Edward Namkyu} and Ilgu Yun",
year = "2012",
month = "9",
day = "1",
doi = "10.1016/j.sse.2012.04.029",
language = "English",
volume = "75",
pages = "93--96",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",

}

Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors. / Park, Suehye; Cho, Edward Namkyu; Yun, Ilgu.

In: Solid-State Electronics, Vol. 75, 01.09.2012, p. 93-96.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

AU - Park, Suehye

AU - Cho, Edward Namkyu

AU - Yun, Ilgu

PY - 2012/9/1

Y1 - 2012/9/1

N2 - The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.

AB - The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.

UR - http://www.scopus.com/inward/record.url?scp=84863312310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863312310&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2012.04.029

DO - 10.1016/j.sse.2012.04.029

M3 - Article

VL - 75

SP - 93

EP - 96

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -