The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to their transparent properties. In this paper, we report on the relationship between the subgap density of states (DOS), field-effect mobility (μ FE), and unit channel length resistance (r ch) on the electrical properties of a-IGZO TFTs. The three tested structures had the same channel width/length and gate insulator thickness with different gate insulator materials, SiN X, SiO X, and SiO X/SiN X. Compared to TFTs with low subgap DOS levels, TFTs with high subgap DOS levels have low μ FE values due to the relatively large r ch values.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry