Investigation on the surface characteristics of GaAs after sulfuric-vapor treatment

Ji Wan Kim, Min Gu Kang, Hyung-Ho Park

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The chemical bonding state and surface morphology of sulfuric-vapor treated GaAs surface were investigated using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The sulfuric vapor was obtained through the heating of (NH4)2Sx solution at 60 °C. At the initial state of the treatment, the decrease of elemental As and the generation of As-S bonds were observed. Even after all of the elemental As converted into As-S bonds, peak area of the As-S bond increased until 5 min exposure. Unlike the liquid-phase treatment, the dissolution of the elemental As did not happen during the treatment and the formation of As-polysulfides was observed. Through the surface treatment of the GaAs using sulfuric vapor, small particles were formed and increased with treatment time. After 5 min exposure, they were linked to form a large agglomerate. This corresponds to a deposit of polysulfides containing hydrogen. To evaluate the effectiveness of the sulfuric vapor-treatment against oxidation in air, the treated GaAs was exposed to air and compared with the GaAs treated using a (NH4)2Sx solution. The As-polysulfides and polysulfides containing hydrogen were revealed to be easily decomposed by exposure to air. The character of S bond with GaAs was revealed to be the most important to obtain a passivation effect.

Original languageEnglish
Pages (from-to)423-429
Number of pages7
JournalThin Solid Films
Volume355
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 1999 Apr 121999 Apr 15

Fingerprint

Polysulfides
polysulfides
Vapors
vapors
Air
Hydrogen
air
Passivation
Surface morphology
Surface treatment
hydrogen
Dissolution
surface treatment
Deposits
X ray photoelectron spectroscopy
passivity
dissolving
Heating
liquid phases
Oxidation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Investigation on the surface characteristics of GaAs after sulfuric-vapor treatment",
abstract = "The chemical bonding state and surface morphology of sulfuric-vapor treated GaAs surface were investigated using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The sulfuric vapor was obtained through the heating of (NH4)2Sx solution at 60 °C. At the initial state of the treatment, the decrease of elemental As and the generation of As-S bonds were observed. Even after all of the elemental As converted into As-S bonds, peak area of the As-S bond increased until 5 min exposure. Unlike the liquid-phase treatment, the dissolution of the elemental As did not happen during the treatment and the formation of As-polysulfides was observed. Through the surface treatment of the GaAs using sulfuric vapor, small particles were formed and increased with treatment time. After 5 min exposure, they were linked to form a large agglomerate. This corresponds to a deposit of polysulfides containing hydrogen. To evaluate the effectiveness of the sulfuric vapor-treatment against oxidation in air, the treated GaAs was exposed to air and compared with the GaAs treated using a (NH4)2Sx solution. The As-polysulfides and polysulfides containing hydrogen were revealed to be easily decomposed by exposure to air. The character of S bond with GaAs was revealed to be the most important to obtain a passivation effect.",
author = "Kim, {Ji Wan} and Kang, {Min Gu} and Hyung-Ho Park",
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Investigation on the surface characteristics of GaAs after sulfuric-vapor treatment. / Kim, Ji Wan; Kang, Min Gu; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 355, 01.11.1999, p. 423-429.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Investigation on the surface characteristics of GaAs after sulfuric-vapor treatment

AU - Kim, Ji Wan

AU - Kang, Min Gu

AU - Park, Hyung-Ho

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The chemical bonding state and surface morphology of sulfuric-vapor treated GaAs surface were investigated using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The sulfuric vapor was obtained through the heating of (NH4)2Sx solution at 60 °C. At the initial state of the treatment, the decrease of elemental As and the generation of As-S bonds were observed. Even after all of the elemental As converted into As-S bonds, peak area of the As-S bond increased until 5 min exposure. Unlike the liquid-phase treatment, the dissolution of the elemental As did not happen during the treatment and the formation of As-polysulfides was observed. Through the surface treatment of the GaAs using sulfuric vapor, small particles were formed and increased with treatment time. After 5 min exposure, they were linked to form a large agglomerate. This corresponds to a deposit of polysulfides containing hydrogen. To evaluate the effectiveness of the sulfuric vapor-treatment against oxidation in air, the treated GaAs was exposed to air and compared with the GaAs treated using a (NH4)2Sx solution. The As-polysulfides and polysulfides containing hydrogen were revealed to be easily decomposed by exposure to air. The character of S bond with GaAs was revealed to be the most important to obtain a passivation effect.

AB - The chemical bonding state and surface morphology of sulfuric-vapor treated GaAs surface were investigated using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The sulfuric vapor was obtained through the heating of (NH4)2Sx solution at 60 °C. At the initial state of the treatment, the decrease of elemental As and the generation of As-S bonds were observed. Even after all of the elemental As converted into As-S bonds, peak area of the As-S bond increased until 5 min exposure. Unlike the liquid-phase treatment, the dissolution of the elemental As did not happen during the treatment and the formation of As-polysulfides was observed. Through the surface treatment of the GaAs using sulfuric vapor, small particles were formed and increased with treatment time. After 5 min exposure, they were linked to form a large agglomerate. This corresponds to a deposit of polysulfides containing hydrogen. To evaluate the effectiveness of the sulfuric vapor-treatment against oxidation in air, the treated GaAs was exposed to air and compared with the GaAs treated using a (NH4)2Sx solution. The As-polysulfides and polysulfides containing hydrogen were revealed to be easily decomposed by exposure to air. The character of S bond with GaAs was revealed to be the most important to obtain a passivation effect.

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