Ion-beam-induced surface modification of solution-derived indium-doped zinc oxide film for a liquid crystal device with stable and fast switching properties

Ju Hwan Lee, Eun Mi Kim, Gi Seok Heo, Hae Chang Jeong, Dong Hyun Kim, Dong Wook Lee, Jeong Min Han, Tae Wan Kim, Dae Shik Seo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The characteristics of a solution-derived indium-doped zinc oxide (In:ZnO) film exposed to ion-beam (IB) irradiation as a liquid crystal (LC) alignment layer were investigated. Solution processing was conducted to deposit a thin layer on a substrate and irradiation at various IB irradiation energies was used as an LC alignment method, all of which achieved uniform and homogeneous LC alignment. Atomic force microscopy using three-dimensional imaging and numerical analyses showed that the IB irradiation reduced the surface roughness. Through the X-ray photoelectron spectroscopy, it was revealed that the modification of the chemical composition due to the IB irradiation affected the state of the LC alignment. Increased polarizability of the surface and oxygen vacancies induced strong van der Waals forces between the In:ZnO film surface and the LC molecules, thereby subsequently achieving uniform and homogeneous LC alignment. The electro-optical (EO) characteristics of a twisted-nematic cell made with IB-irradiated In:ZnO film at an IB irradiation energy of 2200 eV, with which outstanding EO performance was observed. Therefore, using the solution-derived In:ZnO film with the IB irradiation as an alignment shows remarkable potential for use in LC device.

Original languageEnglish
Pages (from-to)209-214
Number of pages6
JournalOptical Materials
Volume84
DOIs
Publication statusPublished - 2018 Oct

Fingerprint

Zinc Oxide
Liquid Crystals
Indium
Zinc oxide
zinc oxides
Liquid crystals
Ion beams
Oxide films
indium
Surface treatment
oxide films
ion beams
liquid crystals
Irradiation
alignment
irradiation
Van der Waals forces
Oxygen vacancies
Atomic force microscopy
surface roughness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Cite this

Lee, Ju Hwan ; Kim, Eun Mi ; Heo, Gi Seok ; Jeong, Hae Chang ; Kim, Dong Hyun ; Lee, Dong Wook ; Han, Jeong Min ; Kim, Tae Wan ; Seo, Dae Shik. / Ion-beam-induced surface modification of solution-derived indium-doped zinc oxide film for a liquid crystal device with stable and fast switching properties. In: Optical Materials. 2018 ; Vol. 84. pp. 209-214.
@article{eeaa41224e894cbc9fcc5ba5051ee55d,
title = "Ion-beam-induced surface modification of solution-derived indium-doped zinc oxide film for a liquid crystal device with stable and fast switching properties",
abstract = "The characteristics of a solution-derived indium-doped zinc oxide (In:ZnO) film exposed to ion-beam (IB) irradiation as a liquid crystal (LC) alignment layer were investigated. Solution processing was conducted to deposit a thin layer on a substrate and irradiation at various IB irradiation energies was used as an LC alignment method, all of which achieved uniform and homogeneous LC alignment. Atomic force microscopy using three-dimensional imaging and numerical analyses showed that the IB irradiation reduced the surface roughness. Through the X-ray photoelectron spectroscopy, it was revealed that the modification of the chemical composition due to the IB irradiation affected the state of the LC alignment. Increased polarizability of the surface and oxygen vacancies induced strong van der Waals forces between the In:ZnO film surface and the LC molecules, thereby subsequently achieving uniform and homogeneous LC alignment. The electro-optical (EO) characteristics of a twisted-nematic cell made with IB-irradiated In:ZnO film at an IB irradiation energy of 2200 eV, with which outstanding EO performance was observed. Therefore, using the solution-derived In:ZnO film with the IB irradiation as an alignment shows remarkable potential for use in LC device.",
author = "Lee, {Ju Hwan} and Kim, {Eun Mi} and Heo, {Gi Seok} and Jeong, {Hae Chang} and Kim, {Dong Hyun} and Lee, {Dong Wook} and Han, {Jeong Min} and Kim, {Tae Wan} and Seo, {Dae Shik}",
year = "2018",
month = "10",
doi = "10.1016/j.optmat.2018.07.008",
language = "English",
volume = "84",
pages = "209--214",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

Ion-beam-induced surface modification of solution-derived indium-doped zinc oxide film for a liquid crystal device with stable and fast switching properties. / Lee, Ju Hwan; Kim, Eun Mi; Heo, Gi Seok; Jeong, Hae Chang; Kim, Dong Hyun; Lee, Dong Wook; Han, Jeong Min; Kim, Tae Wan; Seo, Dae Shik.

In: Optical Materials, Vol. 84, 10.2018, p. 209-214.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ion-beam-induced surface modification of solution-derived indium-doped zinc oxide film for a liquid crystal device with stable and fast switching properties

AU - Lee, Ju Hwan

AU - Kim, Eun Mi

AU - Heo, Gi Seok

AU - Jeong, Hae Chang

AU - Kim, Dong Hyun

AU - Lee, Dong Wook

AU - Han, Jeong Min

AU - Kim, Tae Wan

AU - Seo, Dae Shik

PY - 2018/10

Y1 - 2018/10

N2 - The characteristics of a solution-derived indium-doped zinc oxide (In:ZnO) film exposed to ion-beam (IB) irradiation as a liquid crystal (LC) alignment layer were investigated. Solution processing was conducted to deposit a thin layer on a substrate and irradiation at various IB irradiation energies was used as an LC alignment method, all of which achieved uniform and homogeneous LC alignment. Atomic force microscopy using three-dimensional imaging and numerical analyses showed that the IB irradiation reduced the surface roughness. Through the X-ray photoelectron spectroscopy, it was revealed that the modification of the chemical composition due to the IB irradiation affected the state of the LC alignment. Increased polarizability of the surface and oxygen vacancies induced strong van der Waals forces between the In:ZnO film surface and the LC molecules, thereby subsequently achieving uniform and homogeneous LC alignment. The electro-optical (EO) characteristics of a twisted-nematic cell made with IB-irradiated In:ZnO film at an IB irradiation energy of 2200 eV, with which outstanding EO performance was observed. Therefore, using the solution-derived In:ZnO film with the IB irradiation as an alignment shows remarkable potential for use in LC device.

AB - The characteristics of a solution-derived indium-doped zinc oxide (In:ZnO) film exposed to ion-beam (IB) irradiation as a liquid crystal (LC) alignment layer were investigated. Solution processing was conducted to deposit a thin layer on a substrate and irradiation at various IB irradiation energies was used as an LC alignment method, all of which achieved uniform and homogeneous LC alignment. Atomic force microscopy using three-dimensional imaging and numerical analyses showed that the IB irradiation reduced the surface roughness. Through the X-ray photoelectron spectroscopy, it was revealed that the modification of the chemical composition due to the IB irradiation affected the state of the LC alignment. Increased polarizability of the surface and oxygen vacancies induced strong van der Waals forces between the In:ZnO film surface and the LC molecules, thereby subsequently achieving uniform and homogeneous LC alignment. The electro-optical (EO) characteristics of a twisted-nematic cell made with IB-irradiated In:ZnO film at an IB irradiation energy of 2200 eV, with which outstanding EO performance was observed. Therefore, using the solution-derived In:ZnO film with the IB irradiation as an alignment shows remarkable potential for use in LC device.

UR - http://www.scopus.com/inward/record.url?scp=85049449690&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049449690&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2018.07.008

DO - 10.1016/j.optmat.2018.07.008

M3 - Article

AN - SCOPUS:85049449690

VL - 84

SP - 209

EP - 214

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -