Ion beam sputtering of SnO2 with low energy oxygen ion beams

Y. S. Choe, J. H. Chung, D. S. Kim, Hong Koo Baik

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

The effects of oxygen ion bombardment on tin oxide films during ion beam sputtering of SnO2 targets at room temperature have been systematically investigated with the variation in oxygen ion beam energy in the range of 0-150 eV directed onto the growing film. The results have been compared with those of ion beam sputtering of SnO2 targets without oxygen ion beam bombardment. Chemical, compositional and structural analyses have been performed on these films. The results indicate that, by the use of oxygen ion-beams with low energy in ion beam sputtering of SnO2 targets, stoichiometric and crystalline stannic oxide films can be obtained on Si(100) substrates at room temperature and that the crystallographic structure and the phase of the films are functions of the energy of the oxygen ion beam.

Original languageEnglish
Pages (from-to)230-233
Number of pages4
JournalThin Solid Films
Volume341
Issue number1
DOIs
Publication statusPublished - 1999 Mar 12

Fingerprint

oxygen ions
Ion beams
Sputtering
sputtering
ion beams
Oxygen
energy
Oxide films
oxide films
bombardment
room temperature
Film growth
Ion bombardment
Tin oxides
tin oxides
Crystalline materials
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Choe, Y. S. ; Chung, J. H. ; Kim, D. S. ; Baik, Hong Koo. / Ion beam sputtering of SnO2 with low energy oxygen ion beams. In: Thin Solid Films. 1999 ; Vol. 341, No. 1. pp. 230-233.
@article{38d3d090e32b49508b165f5eac8d698b,
title = "Ion beam sputtering of SnO2 with low energy oxygen ion beams",
abstract = "The effects of oxygen ion bombardment on tin oxide films during ion beam sputtering of SnO2 targets at room temperature have been systematically investigated with the variation in oxygen ion beam energy in the range of 0-150 eV directed onto the growing film. The results have been compared with those of ion beam sputtering of SnO2 targets without oxygen ion beam bombardment. Chemical, compositional and structural analyses have been performed on these films. The results indicate that, by the use of oxygen ion-beams with low energy in ion beam sputtering of SnO2 targets, stoichiometric and crystalline stannic oxide films can be obtained on Si(100) substrates at room temperature and that the crystallographic structure and the phase of the films are functions of the energy of the oxygen ion beam.",
author = "Choe, {Y. S.} and Chung, {J. H.} and Kim, {D. S.} and Baik, {Hong Koo}",
year = "1999",
month = "3",
day = "12",
doi = "10.1016/S0040-6090(98)01536-3",
language = "English",
volume = "341",
pages = "230--233",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

Ion beam sputtering of SnO2 with low energy oxygen ion beams. / Choe, Y. S.; Chung, J. H.; Kim, D. S.; Baik, Hong Koo.

In: Thin Solid Films, Vol. 341, No. 1, 12.03.1999, p. 230-233.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Ion beam sputtering of SnO2 with low energy oxygen ion beams

AU - Choe, Y. S.

AU - Chung, J. H.

AU - Kim, D. S.

AU - Baik, Hong Koo

PY - 1999/3/12

Y1 - 1999/3/12

N2 - The effects of oxygen ion bombardment on tin oxide films during ion beam sputtering of SnO2 targets at room temperature have been systematically investigated with the variation in oxygen ion beam energy in the range of 0-150 eV directed onto the growing film. The results have been compared with those of ion beam sputtering of SnO2 targets without oxygen ion beam bombardment. Chemical, compositional and structural analyses have been performed on these films. The results indicate that, by the use of oxygen ion-beams with low energy in ion beam sputtering of SnO2 targets, stoichiometric and crystalline stannic oxide films can be obtained on Si(100) substrates at room temperature and that the crystallographic structure and the phase of the films are functions of the energy of the oxygen ion beam.

AB - The effects of oxygen ion bombardment on tin oxide films during ion beam sputtering of SnO2 targets at room temperature have been systematically investigated with the variation in oxygen ion beam energy in the range of 0-150 eV directed onto the growing film. The results have been compared with those of ion beam sputtering of SnO2 targets without oxygen ion beam bombardment. Chemical, compositional and structural analyses have been performed on these films. The results indicate that, by the use of oxygen ion-beams with low energy in ion beam sputtering of SnO2 targets, stoichiometric and crystalline stannic oxide films can be obtained on Si(100) substrates at room temperature and that the crystallographic structure and the phase of the films are functions of the energy of the oxygen ion beam.

UR - http://www.scopus.com/inward/record.url?scp=0032666345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032666345&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(98)01536-3

DO - 10.1016/S0040-6090(98)01536-3

M3 - Conference article

AN - SCOPUS:0032666345

VL - 341

SP - 230

EP - 233

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -