Ion implanted photoresist removal by material loss-free organic solvent

Eunseok Oh, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Removal of highly ion-implanted photoresist on the trench-structured GaAs was conducted by mixtures of organic solvents with additives. The ion implanted KrF photoresist on trench-structured GaAs was completely removed at 30 °C when an additive was added to the DMSO+ acetonitrile (AcN) solution. In addition, the removal rate of the implanted photoresist could be increased in DMSO+AcN+additive solution. It was also observed that the DMSO+AcN+additive solution did not cause significant material loss on the GaAs surface during the photoresist removal process.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIV
EditorsMarc Heyns, Marc Meuris, Marc Meuris, Paul Mertens
PublisherTrans Tech Publications Ltd
Pages52-56
Number of pages5
ISBN (Print)9783035714173
DOIs
Publication statusPublished - 2018 Jan 1
Event14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium
Duration: 2018 Sep 32018 Sep 5

Publication series

NameSolid State Phenomena
Volume282 SSP
ISSN (Electronic)1662-9779

Other

Other14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
CountryBelgium
CityLeuven
Period18/9/318/9/5

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Oh, E., & Lim, S. (2018). Ion implanted photoresist removal by material loss-free organic solvent. In M. Heyns, M. Meuris, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 52-56). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.52