Abstract
Removal of highly ion-implanted photoresist on the trench-structured GaAs was conducted by mixtures of organic solvents with additives. The ion implanted KrF photoresist on trench-structured GaAs was completely removed at 30 °C when an additive was added to the DMSO+ acetonitrile (AcN) solution. In addition, the removal rate of the implanted photoresist could be increased in DMSO+AcN+additive solution. It was also observed that the DMSO+AcN+additive solution did not cause significant material loss on the GaAs surface during the photoresist removal process.
| Original language | English |
|---|---|
| Title of host publication | Ultra Clean Processing of Semiconductor Surfaces XIV |
| Editors | Paul Mertens, Marc Meuris, Marc Meuris, Marc Heyns |
| Publisher | Trans Tech Publications Ltd |
| Pages | 52-56 |
| Number of pages | 5 |
| ISBN (Print) | 9783035714173 |
| DOIs | |
| Publication status | Published - 2018 |
| Event | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sept 3 → 2018 Sept 5 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 282 SSP |
| ISSN (Print) | 1012-0394 |
| ISSN (Electronic) | 1662-9779 |
Other
| Other | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 |
|---|---|
| Country/Territory | Belgium |
| City | Leuven |
| Period | 18/9/3 → 18/9/5 |
Bibliographical note
Publisher Copyright:© 2018 Trans Tech Publications, Switzerland.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics