Ion-implanted photoresist stripping by using organic solvents

Eunseok Oh; Sangwoo Lim

doi:10.1149/09202.0037ecst

Ion-implanted photoresist stripping by using organic solvents

Eunseok Oh, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Various organic solvent-based mixture solutions were used to remove the ion-implanted photoresist on trench-patterned GaAs wafers. The mixture of acetonitrile (AcN) and dimethyl sulfoxide (DMSO) could remove bulk photoresist and crust but left a small amount of photoresist residue. However, the combination of AcN and DMSO with a small amount of HF completely removed highdose ion-implanted photoresist even at 30 °C (ion-implantation dose of 5×10¹⁵ ions/cm² and the energy of 70 keV). Moreover, there was no material loss of GaAs wafer observed in AcN+DMSO+HF solution during the removal of ion-implanted photoresist.

Original language	English
Title of host publication	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
Editors	Koichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat
Publisher	Electrochemical Society Inc.
Pages	37-43
Number of pages	7
Edition	2
ISBN (Electronic)	9781607688761
ISBN (Print)	9781607688761
DOIs	https://doi.org/10.1149/09202.0037ecst
Publication status	Published - 2019
Event	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17

Publication series

Name	ECS Transactions
Number	2
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	19/10/13 → 19/10/17

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347).

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/09202.0037ecst

Cite this

Oh, E., & Lim, S. (2019). Ion-implanted photoresist stripping by using organic solvents. In K. Saga, P. W. Mertens, T. Hattori, J. Ruzyllo, & A. J. Muscat (Eds.), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 (2 ed., pp. 37-43). (ECS Transactions; Vol. 92, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/09202.0037ecst

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title = "Ion-implanted photoresist stripping by using organic solvents",

abstract = "Various organic solvent-based mixture solutions were used to remove the ion-implanted photoresist on trench-patterned GaAs wafers. The mixture of acetonitrile (AcN) and dimethyl sulfoxide (DMSO) could remove bulk photoresist and crust but left a small amount of photoresist residue. However, the combination of AcN and DMSO with a small amount of HF completely removed highdose ion-implanted photoresist even at 30 °C (ion-implantation dose of 5×1015 ions/cm2 and the energy of 70 keV). Moreover, there was no material loss of GaAs wafer observed in AcN+DMSO+HF solution during the removal of ion-implanted photoresist.",

author = "Eunseok Oh and Sangwoo Lim",

note = "Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347). Publisher Copyright: {\textcopyright} The Electrochemical Society.; 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",

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language = "English",

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series = "ECS Transactions",

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Oh, E & Lim, S 2019, Ion-implanted photoresist stripping by using organic solvents. in K Saga, PW Mertens, T Hattori, J Ruzyllo & AJ Muscat (eds), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. 2 edn, ECS Transactions, no. 2, vol. 92, Electrochemical Society Inc., pp. 37-43, 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09202.0037ecst

Ion-implanted photoresist stripping by using organic solvents. / Oh, Eunseok; Lim, Sangwoo.

16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. ed. / Koichiro Saga; Paul W. Mertens; Takeshi Hattori; Jerzy Ruzyllo; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. p. 37-43 (ECS Transactions; Vol. 92, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Oh, Eunseok

AU - Lim, Sangwoo

N1 - Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347). Publisher Copyright: © The Electrochemical Society.

PY - 2019

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N2 - Various organic solvent-based mixture solutions were used to remove the ion-implanted photoresist on trench-patterned GaAs wafers. The mixture of acetonitrile (AcN) and dimethyl sulfoxide (DMSO) could remove bulk photoresist and crust but left a small amount of photoresist residue. However, the combination of AcN and DMSO with a small amount of HF completely removed highdose ion-implanted photoresist even at 30 °C (ion-implantation dose of 5×1015 ions/cm2 and the energy of 70 keV). Moreover, there was no material loss of GaAs wafer observed in AcN+DMSO+HF solution during the removal of ion-implanted photoresist.

AB - Various organic solvent-based mixture solutions were used to remove the ion-implanted photoresist on trench-patterned GaAs wafers. The mixture of acetonitrile (AcN) and dimethyl sulfoxide (DMSO) could remove bulk photoresist and crust but left a small amount of photoresist residue. However, the combination of AcN and DMSO with a small amount of HF completely removed highdose ion-implanted photoresist even at 30 °C (ion-implantation dose of 5×1015 ions/cm2 and the energy of 70 keV). Moreover, there was no material loss of GaAs wafer observed in AcN+DMSO+HF solution during the removal of ion-implanted photoresist.

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Ion-implanted photoresist stripping by using organic solvents

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

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