Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays

Jongman Kim, Wan Shick Hong, Sunghyun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi

Research output: Contribution to conferencePaper

Abstract

An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.

Original languageEnglish
Pages80-86
Number of pages7
Publication statusPublished - 2005 Dec 19
EventThin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: 2004 Oct 42004 Oct 6

Other

OtherThin Film Transistor Technologies VII - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/404/10/6

Fingerprint

Polysilicon
Doping (additives)
Plastics
Ions
Substrates
Sheet resistance
Ohmic contacts
Excimer lasers
Chemical activation
Glass
Atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, J., Hong, W. S., Lee, S., Kim, D. Y., Jung, J. S., Kwon, J. Y., & Noguchi, T. (2005). Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays. 80-86. Paper presented at Thin Film Transistor Technologies VII - Proceedings of the International Symposium, Honolulu, HI, United States.
Kim, Jongman ; Hong, Wan Shick ; Lee, Sunghyun ; Kim, Do Young ; Jung, Ji Sim ; Kwon, Jang Yeon ; Noguchi, Takashi. / Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays. Paper presented at Thin Film Transistor Technologies VII - Proceedings of the International Symposium, Honolulu, HI, United States.7 p.
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abstract = "An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.",
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Kim, J, Hong, WS, Lee, S, Kim, DY, Jung, JS, Kwon, JY & Noguchi, T 2005, 'Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays', Paper presented at Thin Film Transistor Technologies VII - Proceedings of the International Symposium, Honolulu, HI, United States, 04/10/4 - 04/10/6 pp. 80-86.

Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays. / Kim, Jongman; Hong, Wan Shick; Lee, Sunghyun; Kim, Do Young; Jung, Ji Sim; Kwon, Jang Yeon; Noguchi, Takashi.

2005. 80-86 Paper presented at Thin Film Transistor Technologies VII - Proceedings of the International Symposium, Honolulu, HI, United States.

Research output: Contribution to conferencePaper

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AU - Kim, Jongman

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AU - Lee, Sunghyun

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N2 - An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.

AB - An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.

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Kim J, Hong WS, Lee S, Kim DY, Jung JS, Kwon JY et al. Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays. 2005. Paper presented at Thin Film Transistor Technologies VII - Proceedings of the International Symposium, Honolulu, HI, United States.