An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.
|Number of pages||7|
|Publication status||Published - 2005 Dec 19|
|Event||Thin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States|
Duration: 2004 Oct 4 → 2004 Oct 6
|Other||Thin Film Transistor Technologies VII - Proceedings of the International Symposium|
|Period||04/10/4 → 04/10/6|
All Science Journal Classification (ASJC) codes