Abstract
Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.
| Original language | English |
|---|---|
| Title of host publication | Ultra Clean Processing of Semiconductor Surfaces XIV |
| Editors | Marc Heyns, Marc Meuris, Marc Meuris, Paul Mertens |
| Publisher | Trans Tech Publications Ltd |
| Pages | 147-151 |
| Number of pages | 5 |
| ISBN (Print) | 9783035714173 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Event | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sep 3 → 2018 Sep 5 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 282 SSP |
| ISSN (Electronic) | 1662-9779 |
Other
| Other | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 |
|---|---|
| Country | Belgium |
| City | Leuven |
| Period | 18/9/3 → 18/9/5 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
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Cite this
Son, C., Kim, T., Park, T., & Lim, S. (2018). Is highly selective si3n4/sio2 etching feasible without phosphoric acid? In M. Heyns, M. Meuris, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 147-151). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.147