Is highly selective si3n4/sio2 etching feasible without phosphoric acid?

Changjin Son, Taehyeon Kim, Taegun Park, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIV
EditorsPaul Mertens, Marc Meuris, Marc Meuris, Marc Heyns
PublisherTrans Tech Publications Ltd
Pages147-151
Number of pages5
ISBN (Print)9783035714173
DOIs
Publication statusPublished - 2018
Event14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium
Duration: 2018 Sep 32018 Sep 5

Publication series

NameSolid State Phenomena
Volume282 SSP
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Other

Other14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
CountryBelgium
CityLeuven
Period18/9/318/9/5

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Is highly selective si<sub>3</sub>n<sub>4</sub>/sio<sub>2</sub> etching feasible without phosphoric acid?'. Together they form a unique fingerprint.

  • Cite this

    Son, C., Kim, T., Park, T., & Lim, S. (2018). Is highly selective si3n4/sio2 etching feasible without phosphoric acid? In P. Mertens, M. Meuris, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 147-151). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.147