Abstract
Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.
| Original language | English |
|---|---|
| Title of host publication | Ultra Clean Processing of Semiconductor Surfaces XIV |
| Editors | Marc Heyns, Marc Meuris, Marc Meuris, Paul Mertens |
| Publisher | Trans Tech Publications Ltd |
| Pages | 147-151 |
| Number of pages | 5 |
| ISBN (Print) | 9783035714173 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Event | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sep 3 → 2018 Sep 5 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 282 SSP |
| ISSN (Electronic) | 1662-9779 |
Other
| Other | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 |
|---|---|
| Country | Belgium |
| City | Leuven |
| Period | 18/9/3 → 18/9/5 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
Cite this
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Is highly selective si3n4/sio2 etching feasible without phosphoric acid? / Son, Changjin; Kim, Taehyeon; Park, Taegun; Lim, Sangwoo.
Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Marc Heyns; Marc Meuris; Marc Meuris; Paul Mertens. Trans Tech Publications Ltd, 2018. p. 147-151 (Solid State Phenomena; Vol. 282 SSP).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Is highly selective si3n4/sio2 etching feasible without phosphoric acid?
AU - Son, Changjin
AU - Kim, Taehyeon
AU - Park, Taegun
AU - Lim, Sangwoo
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.
AB - Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.
UR - http://www.scopus.com/inward/record.url?scp=85055441782&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85055441782&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.282.147
DO - 10.4028/www.scientific.net/SSP.282.147
M3 - Conference contribution
AN - SCOPUS:85055441782
SN - 9783035714173
T3 - Solid State Phenomena
SP - 147
EP - 151
BT - Ultra Clean Processing of Semiconductor Surfaces XIV
A2 - Heyns, Marc
A2 - Meuris, Marc
A2 - Meuris, Marc
A2 - Mertens, Paul
PB - Trans Tech Publications Ltd
ER -