TY - GEN
T1 - Is highly selective si3n4/sio2 etching feasible without phosphoric acid?
AU - Son, Changjin
AU - Kim, Taehyeon
AU - Park, Taegun
AU - Lim, Sangwoo
N1 - Publisher Copyright:
© 2018 Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2018
Y1 - 2018
N2 - Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.
AB - Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.
UR - http://www.scopus.com/inward/record.url?scp=85055441782&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85055441782&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.282.147
DO - 10.4028/www.scientific.net/SSP.282.147
M3 - Conference contribution
AN - SCOPUS:85055441782
SN - 9783035714173
T3 - Solid State Phenomena
SP - 147
EP - 151
BT - Ultra Clean Processing of Semiconductor Surfaces XIV
A2 - Mertens, Paul
A2 - Meuris, Marc
A2 - Meuris, Marc
A2 - Heyns, Marc
PB - Trans Tech Publications Ltd
T2 - 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
Y2 - 3 September 2018 through 5 September 2018
ER -