Is highly selective si3n4/sio2 etching feasible without phosphoric acid?

Changjin Son; Taehyeon Kim; Taegun Park; Sangwoo Lim

doi:10.4028/www.scientific.net/SSP.282.147

Is highly selective si₃n₄/sio₂ etching feasible without phosphoric acid?

Changjin Son, Taehyeon Kim, Taegun Park, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Si₃ N₄ film could be selectively removed by a special H₃ PO₄-free etchant. In order to increase Si₃ N₄ etching rate and Si₃ N₄ /SiO₂ etch selectivity, various additives were added to H₃ PO₄-free etchant. The optimization of additives into H₃ PO₄-free solution, a comparable Si₃ N₄ etching rate with 50 times increased Si₃ N₄ /SiO₂ etch selectivity was obtained as compared to the conventional H₃ PO₄ process.

Original language	English
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces XIV
Editors	Paul Mertens, Marc Meuris, Marc Meuris, Marc Heyns
Publisher	Trans Tech Publications Ltd
Pages	147-151
Number of pages	5
ISBN (Print)	9783035714173
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.282.147
Publication status	Published - 2018
Event	14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sep 3 → 2018 Sep 5

Publication series

Name	Solid State Phenomena
Volume	282 SSP
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Other

Other	14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
Country	Belgium
City	Leuven
Period	18/9/3 → 18/9/5

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.4028/www.scientific.net/SSP.282.147

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Cite this

@inproceedings{8ade7e4027674621b0714e9045ffc402,

title = "Is highly selective si3n4/sio2 etching feasible without phosphoric acid?",

abstract = "Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.",

author = "Changjin Son and Taehyeon Kim and Taegun Park and Sangwoo Lim",

note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 ; Conference date: 03-09-2018 Through 05-09-2018",

year = "2018",

doi = "10.4028/www.scientific.net/SSP.282.147",

language = "English",

isbn = "9783035714173",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "147--151",

editor = "Paul Mertens and Marc Meuris and Marc Meuris and Marc Heyns",

booktitle = "Ultra Clean Processing of Semiconductor Surfaces XIV",

}

Son, C, Kim, T, Park, T & Lim, S 2018, Is highly selective si₃n₄/sio₂ etching feasible without phosphoric acid? in P Mertens, M Meuris, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces XIV. Solid State Phenomena, vol. 282 SSP, Trans Tech Publications Ltd, pp. 147-151, 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018, Leuven, Belgium, 18/9/3. https://doi.org/10.4028/www.scientific.net/SSP.282.147

Is highly selective si₃n₄/sio₂ etching feasible without phosphoric acid? / Son, Changjin; Kim, Taehyeon; Park, Taegun; Lim, Sangwoo.

Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Paul Mertens; Marc Meuris; Marc Meuris; Marc Heyns. Trans Tech Publications Ltd, 2018. p. 147-151 (Solid State Phenomena; Vol. 282 SSP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution