Is highly selective si3n4/sio2 etching feasible without phosphoric acid?

Changjin Son, Taehyeon Kim, Taegun Park, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIV
EditorsMarc Heyns, Marc Meuris, Marc Meuris, Paul Mertens
PublisherTrans Tech Publications Ltd
Pages147-151
Number of pages5
ISBN (Print)9783035714173
DOIs
Publication statusPublished - 2018 Jan 1
Event14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium
Duration: 2018 Sep 32018 Sep 5

Publication series

NameSolid State Phenomena
Volume282 SSP
ISSN (Electronic)1662-9779

Other

Other14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
CountryBelgium
CityLeuven
Period18/9/318/9/5

Fingerprint

etchants
phosphoric acid
Phosphoric acid
Etching
selectivity
etching
optimization
silicon nitride

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Son, C., Kim, T., Park, T., & Lim, S. (2018). Is highly selective si3n4/sio2 etching feasible without phosphoric acid? In M. Heyns, M. Meuris, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 147-151). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.147
Son, Changjin ; Kim, Taehyeon ; Park, Taegun ; Lim, Sangwoo. / Is highly selective si3n4/sio2 etching feasible without phosphoric acid?. Ultra Clean Processing of Semiconductor Surfaces XIV. editor / Marc Heyns ; Marc Meuris ; Marc Meuris ; Paul Mertens. Trans Tech Publications Ltd, 2018. pp. 147-151 (Solid State Phenomena).
@inproceedings{8ade7e4027674621b0714e9045ffc402,
title = "Is highly selective si3n4/sio2 etching feasible without phosphoric acid?",
abstract = "Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.",
author = "Changjin Son and Taehyeon Kim and Taegun Park and Sangwoo Lim",
year = "2018",
month = "1",
day = "1",
doi = "10.4028/www.scientific.net/SSP.282.147",
language = "English",
isbn = "9783035714173",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "147--151",
editor = "Marc Heyns and Marc Meuris and Marc Meuris and Paul Mertens",
booktitle = "Ultra Clean Processing of Semiconductor Surfaces XIV",

}

Son, C, Kim, T, Park, T & Lim, S 2018, Is highly selective si3n4/sio2 etching feasible without phosphoric acid? in M Heyns, M Meuris, M Meuris & P Mertens (eds), Ultra Clean Processing of Semiconductor Surfaces XIV. Solid State Phenomena, vol. 282 SSP, Trans Tech Publications Ltd, pp. 147-151, 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018, Leuven, Belgium, 18/9/3. https://doi.org/10.4028/www.scientific.net/SSP.282.147

Is highly selective si3n4/sio2 etching feasible without phosphoric acid? / Son, Changjin; Kim, Taehyeon; Park, Taegun; Lim, Sangwoo.

Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Marc Heyns; Marc Meuris; Marc Meuris; Paul Mertens. Trans Tech Publications Ltd, 2018. p. 147-151 (Solid State Phenomena; Vol. 282 SSP).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Is highly selective si3n4/sio2 etching feasible without phosphoric acid?

AU - Son, Changjin

AU - Kim, Taehyeon

AU - Park, Taegun

AU - Lim, Sangwoo

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.

AB - Si3 N4 film could be selectively removed by a special H3 PO4-free etchant. In order to increase Si3 N4 etching rate and Si3 N4 /SiO2 etch selectivity, various additives were added to H3 PO4-free etchant. The optimization of additives into H3 PO4-free solution, a comparable Si3 N4 etching rate with 50 times increased Si3 N4 /SiO2 etch selectivity was obtained as compared to the conventional H3 PO4 process.

UR - http://www.scopus.com/inward/record.url?scp=85055441782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055441782&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.282.147

DO - 10.4028/www.scientific.net/SSP.282.147

M3 - Conference contribution

AN - SCOPUS:85055441782

SN - 9783035714173

T3 - Solid State Phenomena

SP - 147

EP - 151

BT - Ultra Clean Processing of Semiconductor Surfaces XIV

A2 - Heyns, Marc

A2 - Meuris, Marc

A2 - Meuris, Marc

A2 - Mertens, Paul

PB - Trans Tech Publications Ltd

ER -

Son C, Kim T, Park T, Lim S. Is highly selective si3n4/sio2 etching feasible without phosphoric acid? In Heyns M, Meuris M, Meuris M, Mertens P, editors, Ultra Clean Processing of Semiconductor Surfaces XIV. Trans Tech Publications Ltd. 2018. p. 147-151. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.282.147