Joint structure in high brightness light emitting diode (HB LED) packages

Jin Woo Park, Young Bok Yoon, Sang Hyun Shin, Sang Hyun Choi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We present the transmission electron microscopy (TEM) analysis of 1.5 μm-thick Au-20Sn solder joint between a high brightness light emitting diode (HB LED) and a Si heat sink. Due to intermetallic compound formation, global Sn depletion occurred in the thin solder, which raised the melting point of the solder and caused local incompleteness of bonding.

Original languageEnglish
Pages (from-to)357-361
Number of pages5
JournalMaterials Science and Engineering A
Volume441
Issue number1-2
DOIs
Publication statusPublished - 2006 Dec 15

Fingerprint

solders
Soldering alloys
Light emitting diodes
Luminance
brightness
light emitting diodes
heat sinks
Heat sinks
Intermetallics
melting points
intermetallics
Melting point
depletion
Transmission electron microscopy
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, Jin Woo ; Yoon, Young Bok ; Shin, Sang Hyun ; Choi, Sang Hyun. / Joint structure in high brightness light emitting diode (HB LED) packages. In: Materials Science and Engineering A. 2006 ; Vol. 441, No. 1-2. pp. 357-361.
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Joint structure in high brightness light emitting diode (HB LED) packages. / Park, Jin Woo; Yoon, Young Bok; Shin, Sang Hyun; Choi, Sang Hyun.

In: Materials Science and Engineering A, Vol. 441, No. 1-2, 15.12.2006, p. 357-361.

Research output: Contribution to journalArticle

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