Abstract
We present the transmission electron microscopy (TEM) analysis of 1.5 μm-thick Au-20Sn solder joint between a high brightness light emitting diode (HB LED) and a Si heat sink. Due to intermetallic compound formation, global Sn depletion occurred in the thin solder, which raised the melting point of the solder and caused local incompleteness of bonding.
| Original language | English |
|---|---|
| Pages (from-to) | 357-361 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering A |
| Volume | 441 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2006 Dec 15 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Park, J. W., Yoon, Y. B., Shin, S. H., & Choi, S. H. (2006). Joint structure in high brightness light emitting diode (HB LED) packages. Materials Science and Engineering A, 441(1-2), 357-361. https://doi.org/10.1016/j.msea.2006.09.043