Junction Design Guideline of Silicon Single-Photon Avalanche Diodes for Edge Breakdown Suppression

Haewon Lee; Dongseok Shin; Hyejeong Choi; Ilgu Yun

doi:10.1109/IPC53466.2022.9975718

Junction Design Guideline of Silicon Single-Photon Avalanche Diodes for Edge Breakdown Suppression

Haewon Lee, Dongseok Shin, Hyejeong Choi, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silicon single-photon avalanche diode (Si-SPAD) for low light detection application is analyzed for device structure variations. Design guidelines of deep n-well junction and guard ring (GR) widths of Si-SPAD are presented to improve electrical characteristics through actual device measurements and technology computer-aided design (TCAD) simulations.

Original language	English
Title of host publication	2022 IEEE Photonics Conference, IPC 2022 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665434874
DOIs	https://doi.org/10.1109/IPC53466.2022.9975718
Publication status	Published - 2022
Event	2022 IEEE Photonics Conference, IPC 2022 - Vancouver, Canada Duration: 2022 Nov 13 → 2022 Nov 17

Publication series

Name	2022 IEEE Photonics Conference, IPC 2022 - Proceedings

Conference

Conference	2022 IEEE Photonics Conference, IPC 2022
Country/Territory	Canada
City	Vancouver
Period	22/11/13 → 22/11/17

Bibliographical note

Funding Information:
The electronic design automation (EDA) tool was supported by the IC Design Education Center (IDEC), Seoul, Korea.

Publisher Copyright:
© 2022 IEEE.

All Science Journal Classification (ASJC) codes

Control and Optimization
Instrumentation
Atomic and Molecular Physics, and Optics
Artificial Intelligence
Computer Networks and Communications
Electrical and Electronic Engineering
Global and Planetary Change
Management, Monitoring, Policy and Law

Access to Document

10.1109/IPC53466.2022.9975718

Cite this

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title = "Junction Design Guideline of Silicon Single-Photon Avalanche Diodes for Edge Breakdown Suppression",

abstract = "Silicon single-photon avalanche diode (Si-SPAD) for low light detection application is analyzed for device structure variations. Design guidelines of deep n-well junction and guard ring (GR) widths of Si-SPAD are presented to improve electrical characteristics through actual device measurements and technology computer-aided design (TCAD) simulations.",

author = "Haewon Lee and Dongseok Shin and Hyejeong Choi and Ilgu Yun",

note = "Funding Information: The electronic design automation (EDA) tool was supported by the IC Design Education Center (IDEC), Seoul, Korea. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Photonics Conference, IPC 2022 ; Conference date: 13-11-2022 Through 17-11-2022",

year = "2022",

doi = "10.1109/IPC53466.2022.9975718",

language = "English",

series = "2022 IEEE Photonics Conference, IPC 2022 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE Photonics Conference, IPC 2022 - Proceedings",

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}

Lee, H, Shin, D, Choi, H & Yun, I 2022, Junction Design Guideline of Silicon Single-Photon Avalanche Diodes for Edge Breakdown Suppression. in 2022 IEEE Photonics Conference, IPC 2022 - Proceedings. 2022 IEEE Photonics Conference, IPC 2022 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Photonics Conference, IPC 2022, Vancouver, Canada, 22/11/13. https://doi.org/10.1109/IPC53466.2022.9975718

Junction Design Guideline of Silicon Single-Photon Avalanche Diodes for Edge Breakdown Suppression. / Lee, Haewon; Shin, Dongseok; Choi, Hyejeong et al.

2022 IEEE Photonics Conference, IPC 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Photonics Conference, IPC 2022 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lee, Haewon

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AU - Choi, Hyejeong

AU - Yun, Ilgu

PY - 2022

Y1 - 2022

N2 - Silicon single-photon avalanche diode (Si-SPAD) for low light detection application is analyzed for device structure variations. Design guidelines of deep n-well junction and guard ring (GR) widths of Si-SPAD are presented to improve electrical characteristics through actual device measurements and technology computer-aided design (TCAD) simulations.

AB - Silicon single-photon avalanche diode (Si-SPAD) for low light detection application is analyzed for device structure variations. Design guidelines of deep n-well junction and guard ring (GR) widths of Si-SPAD are presented to improve electrical characteristics through actual device measurements and technology computer-aided design (TCAD) simulations.

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T3 - 2022 IEEE Photonics Conference, IPC 2022 - Proceedings

BT - 2022 IEEE Photonics Conference, IPC 2022 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Photonics Conference, IPC 2022

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Junction Design Guideline of Silicon Single-Photon Avalanche Diodes for Edge Breakdown Suppression

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

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