Junction formation at the interface of CdS/CuInxGa(1 - X)Se2

Soon Mi Park, Tae Gun Kim, Yong Duck Chung, Dae Hyung Cho, Jeha Kim, Kyung Joong Kim, Yeonjin Yi, Jeong Won Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The interfacial band alignment and chemical composition at the cadmium sulfide (CdS)/copper indium gallium diselenide (CuInx Ga1-x Se2 : CIGS) heterojunction was investigated by photoelectron spectroscopy. Over the two different interfaces made by either thermal deposition of CdS on a CIGS film or step-by-step etching of a chemical-bath deposited (CBD)-CdS/CIGS film by Ar+ ions, the valence band maximum and conduction band minimum were determined using ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy, respectively. Concurrently, x-ray photoelectron spectroscopy was used to trace chemical changes across the interface. Both interfaces showed a In-rich and Cu-deficient profile. The thermal deposition of CdS on CIGS induces Cd-Cu intermixing and nonstoichiometric CdS formation associated with a strong band bending and high electron injection barrier. However, the CBD-CdS layer shows a rather sharp interface and negligible electron injection barrier in the conduction band, which will show better solar cell characteristics.

Original languageEnglish
Article number345302
JournalJournal of Physics D: Applied Physics
Volume47
Issue number34
DOIs
Publication statusPublished - 2014 Aug 30

Fingerprint

Cadmium sulfide
cadmium sulfides
Photoelectron spectroscopy
Electron injection
photoelectron spectroscopy
Conduction bands
baths
conduction bands
Ultraviolet photoelectron spectroscopy
injection
Gallium
Indium
ultraviolet spectroscopy
Valence bands
x ray spectroscopy
gallium
indium
Heterojunctions
cadmium sulfide
heterojunctions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Park, S. M., Kim, T. G., Chung, Y. D., Cho, D. H., Kim, J., Kim, K. J., ... Kim, J. W. (2014). Junction formation at the interface of CdS/CuInxGa(1 - X)Se2. Journal of Physics D: Applied Physics, 47(34), [345302]. https://doi.org/10.1088/0022-3727/47/34/345302
Park, Soon Mi ; Kim, Tae Gun ; Chung, Yong Duck ; Cho, Dae Hyung ; Kim, Jeha ; Kim, Kyung Joong ; Yi, Yeonjin ; Kim, Jeong Won. / Junction formation at the interface of CdS/CuInxGa(1 - X)Se2. In: Journal of Physics D: Applied Physics. 2014 ; Vol. 47, No. 34.
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abstract = "The interfacial band alignment and chemical composition at the cadmium sulfide (CdS)/copper indium gallium diselenide (CuInx Ga1-x Se2 : CIGS) heterojunction was investigated by photoelectron spectroscopy. Over the two different interfaces made by either thermal deposition of CdS on a CIGS film or step-by-step etching of a chemical-bath deposited (CBD)-CdS/CIGS film by Ar+ ions, the valence band maximum and conduction band minimum were determined using ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy, respectively. Concurrently, x-ray photoelectron spectroscopy was used to trace chemical changes across the interface. Both interfaces showed a In-rich and Cu-deficient profile. The thermal deposition of CdS on CIGS induces Cd-Cu intermixing and nonstoichiometric CdS formation associated with a strong band bending and high electron injection barrier. However, the CBD-CdS layer shows a rather sharp interface and negligible electron injection barrier in the conduction band, which will show better solar cell characteristics.",
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Park, SM, Kim, TG, Chung, YD, Cho, DH, Kim, J, Kim, KJ, Yi, Y & Kim, JW 2014, 'Junction formation at the interface of CdS/CuInxGa(1 - X)Se2', Journal of Physics D: Applied Physics, vol. 47, no. 34, 345302. https://doi.org/10.1088/0022-3727/47/34/345302

Junction formation at the interface of CdS/CuInxGa(1 - X)Se2. / Park, Soon Mi; Kim, Tae Gun; Chung, Yong Duck; Cho, Dae Hyung; Kim, Jeha; Kim, Kyung Joong; Yi, Yeonjin; Kim, Jeong Won.

In: Journal of Physics D: Applied Physics, Vol. 47, No. 34, 345302, 30.08.2014.

Research output: Contribution to journalArticle

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AU - Park, Soon Mi

AU - Kim, Tae Gun

AU - Chung, Yong Duck

AU - Cho, Dae Hyung

AU - Kim, Jeha

AU - Kim, Kyung Joong

AU - Yi, Yeonjin

AU - Kim, Jeong Won

PY - 2014/8/30

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N2 - The interfacial band alignment and chemical composition at the cadmium sulfide (CdS)/copper indium gallium diselenide (CuInx Ga1-x Se2 : CIGS) heterojunction was investigated by photoelectron spectroscopy. Over the two different interfaces made by either thermal deposition of CdS on a CIGS film or step-by-step etching of a chemical-bath deposited (CBD)-CdS/CIGS film by Ar+ ions, the valence band maximum and conduction band minimum were determined using ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy, respectively. Concurrently, x-ray photoelectron spectroscopy was used to trace chemical changes across the interface. Both interfaces showed a In-rich and Cu-deficient profile. The thermal deposition of CdS on CIGS induces Cd-Cu intermixing and nonstoichiometric CdS formation associated with a strong band bending and high electron injection barrier. However, the CBD-CdS layer shows a rather sharp interface and negligible electron injection barrier in the conduction band, which will show better solar cell characteristics.

AB - The interfacial band alignment and chemical composition at the cadmium sulfide (CdS)/copper indium gallium diselenide (CuInx Ga1-x Se2 : CIGS) heterojunction was investigated by photoelectron spectroscopy. Over the two different interfaces made by either thermal deposition of CdS on a CIGS film or step-by-step etching of a chemical-bath deposited (CBD)-CdS/CIGS film by Ar+ ions, the valence band maximum and conduction band minimum were determined using ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy, respectively. Concurrently, x-ray photoelectron spectroscopy was used to trace chemical changes across the interface. Both interfaces showed a In-rich and Cu-deficient profile. The thermal deposition of CdS on CIGS induces Cd-Cu intermixing and nonstoichiometric CdS formation associated with a strong band bending and high electron injection barrier. However, the CBD-CdS layer shows a rather sharp interface and negligible electron injection barrier in the conduction band, which will show better solar cell characteristics.

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