Junction properties of Au/ZnO single nanowire Schottky diode

Sachindra Nath Das, Ji Huck Choi, Jyoti Prakash Kar, Kyeong Ju Moon, Tae Il Lee, Jae Min Myoung

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In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy (XPS) measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agreement with the value obtained from the XPS measurements but lower than the theoretically predicted value. The ionization of interface states has been considered for explaining this discrepancy.

Original languageEnglish
Article number092111
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2010 Mar 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Das, S. N., Choi, J. H., Kar, J. P., Moon, K. J., Lee, T. I., & Myoung, J. M. (2010). Junction properties of Au/ZnO single nanowire Schottky diode. Applied Physics Letters, 96(9), [092111]. https://doi.org/10.1063/1.3339883