Junction properties of Au/ZnO single nanowire Schottky diode

Sachindra Nath Das, Ji Huck Choi, Jyoti Prakash Kar, Kyeong Ju Moon, Tae Il Lee, Jae Min Myoung

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy (XPS) measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agreement with the value obtained from the XPS measurements but lower than the theoretically predicted value. The ionization of interface states has been considered for explaining this discrepancy.

Original languageEnglish
Article number092111
JournalApplied Physics Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2010 Mar 19

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Schottky diodes
x ray spectroscopy
nanowires
photoelectron spectroscopy
thermionic emission
ionization
electric potential
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Das, S. N., Choi, J. H., Kar, J. P., Moon, K. J., Lee, T. I., & Myoung, J. M. (2010). Junction properties of Au/ZnO single nanowire Schottky diode. Applied Physics Letters, 96(9), [092111]. https://doi.org/10.1063/1.3339883
Das, Sachindra Nath ; Choi, Ji Huck ; Kar, Jyoti Prakash ; Moon, Kyeong Ju ; Lee, Tae Il ; Myoung, Jae Min. / Junction properties of Au/ZnO single nanowire Schottky diode. In: Applied Physics Letters. 2010 ; Vol. 96, No. 9.
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Junction properties of Au/ZnO single nanowire Schottky diode. / Das, Sachindra Nath; Choi, Ji Huck; Kar, Jyoti Prakash; Moon, Kyeong Ju; Lee, Tae Il; Myoung, Jae Min.

In: Applied Physics Letters, Vol. 96, No. 9, 092111, 19.03.2010.

Research output: Contribution to journalArticle

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