Junction temperature measurement of InAs quantum-dot laser diodes by utilizing voltage-temperature method

Jung Hwa Jeong, Kyoung Chan Kim, Jung Il Lee, Hyun Jae Kim, Il Ki Han

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage-temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO2 as the insulating layer. As a result, ground state optical power is doubled.

Original languageEnglish
Pages (from-to)1354-1356
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number16
DOIs
Publication statusPublished - 2008 Aug 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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