This paper presents designs and measurements of K a-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-μm CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at 35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and > 32-dB isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (IP1 dB) can be significantly increased to ∼ 23 dBm with the use of a high substrate resistance design. In contrast, IP1 dB of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13-μm CMOS designs can be used for state-of-the-art switches at 26-40 GHz.
|Number of pages||8|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - 2008 Jun|
Bibliographical noteFunding Information:
Manuscript received December 6, 2007; revised March 3, 2008. This work was supported by the U.S. Army Research Laboratories under a Collaborative Technology Agreement (CTA).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering