K a-band low-loss and high-isolation switch design in 0.13-μ CMOS

Byung Wook Min, Gabriel M. Rebeiz

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

This paper presents designs and measurements of K a-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-μm CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at 35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and > 32-dB isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (IP1 dB) can be significantly increased to ∼ 23 dBm with the use of a high substrate resistance design. In contrast, IP1 dB of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13-μm CMOS designs can be used for state-of-the-art switches at 26-40 GHz.

Original languageEnglish
Article number4511509
Pages (from-to)1364-1371
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume56
Issue number6
DOIs
Publication statusPublished - 2008 Jun 1

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isolation
CMOS
switches
Switches
shunts
Poles
Insertion losses
poles
insertion loss
Substrates
Transistors
transistors

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "This paper presents designs and measurements of K a-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-μm CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at 35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and > 32-dB isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (IP1 dB) can be significantly increased to ∼ 23 dBm with the use of a high substrate resistance design. In contrast, IP1 dB of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13-μm CMOS designs can be used for state-of-the-art switches at 26-40 GHz.",
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K a-band low-loss and high-isolation switch design in 0.13-μ CMOS. / Min, Byung Wook; Rebeiz, Gabriel M.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 6, 4511509, 01.06.2008, p. 1364-1371.

Research output: Contribution to journalArticle

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