k-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P

B. S. Jeong, J. S. Choi, S. K. Chang, C. H. Chung, H. L. Park, H. J. Lee, J. I. Lee, H. Lim, S. Y. Kim

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Abstract

Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalSolid State Communications
Volume82
Issue number1
DOIs
Publication statusPublished - 1992 Apr

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Jeong, B. S., Choi, J. S., Chang, S. K., Chung, C. H., Park, H. L., Lee, H. J., Lee, J. I., Lim, H., & Kim, S. Y. (1992). k-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P. Solid State Communications, 82(1), 7-12. https://doi.org/10.1016/0038-1098(92)90396-Q