Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.
Bibliographical noteFunding Information:
* "supported by K06EF through SPRC of
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry