k-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P

B. S. Jeong; J. S. Choi; S. K. Chang; C. H. Chung; H. L. Park; H. J. Lee; J. I. Lee; H. Lim; S. Y. Kim

doi:10.1016/0038-1098(92)90396-Q

k-nonconserving transition in heavily doped LPE grown n-type In_0.5Ga_0.5P

B. S. Jeong, J. S. Choi, S. K. Chang, C. H. Chung, H. L. Park, H. J. Lee, J. I. Lee, H. Lim, S. Y. Kim

Department of Physics

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In_0.5Ga_0.5P and we confirmed the first k-nonconserving optical transition in In_0.5Ga_0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.

Original language	English
Pages (from-to)	7-12
Number of pages	6
Journal	Solid State Communications
Volume	82
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(92)90396-Q
Publication status	Published - 1992 Apr

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All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Cite this

Jeong, B. S., Choi, J. S., Chang, S. K., Chung, C. H., Park, H. L., Lee, H. J., Lee, J. I., Lim, H., & Kim, S. Y. (1992). k-nonconserving transition in heavily doped LPE grown n-type In_0.5Ga_0.5P. Solid State Communications, 82(1), 7-12. https://doi.org/10.1016/0038-1098(92)90396-Q

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abstract = "Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.",

author = "Jeong, {B. S.} and Choi, {J. S.} and Chang, {S. K.} and Chung, {C. H.} and Park, {H. L.} and Lee, {H. J.} and Lee, {J. I.} and H. Lim and Kim, {S. Y.}",

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doi = "10.1016/0038-1098(92)90396-Q",

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T1 - k-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P

AU - Jeong, B. S.

AU - Choi, J. S.

AU - Chang, S. K.

AU - Chung, C. H.

AU - Park, H. L.

AU - Lee, H. J.

AU - Lee, J. I.

AU - Lim, H.

AU - Kim, S. Y.

PY - 1992/4

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N2 - Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.

AB - Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.

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JO - Solid State Communications

JF - Solid State Communications

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10.1016/0038-1098(92)90396-Q