Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules

Byung-Wook Min, Gabriel M. Rebeiz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)

Abstract

This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 μm SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1±1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7° 30-38 GHz. The total chip size is 900×400 μm2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages479-482
Number of pages4
DOIs
Publication statusPublished - 2007 Oct 2
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 2007 Jun 32007 Jun 8

Other

Other2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period07/6/307/6/8

Fingerprint

Phase shifters
phased arrays
modules
chips
phase error
field effect transistors
switches
Heterojunction bipolar transistors
Noise figure
silicon
Switches
Silicon

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Min, B-W., & Rebeiz, G. M. (2007). Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules. In 2007 IEEE MTT-S International Microwave Symposium Digest (pp. 479-482). [4263854] https://doi.org/10.1109/MWSYM.2007.380511
Min, Byung-Wook ; Rebeiz, Gabriel M. / Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules. 2007 IEEE MTT-S International Microwave Symposium Digest. 2007. pp. 479-482
@inproceedings{537727e3581c4d548c60ca3d97b806fd,
title = "Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules",
abstract = "This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 μm SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1±1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7° 30-38 GHz. The total chip size is 900×400 μm2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.",
author = "Byung-Wook Min and Rebeiz, {Gabriel M.}",
year = "2007",
month = "10",
day = "2",
doi = "10.1109/MWSYM.2007.380511",
language = "English",
isbn = "1424406889",
pages = "479--482",
booktitle = "2007 IEEE MTT-S International Microwave Symposium Digest",

}

Min, B-W & Rebeiz, GM 2007, Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules. in 2007 IEEE MTT-S International Microwave Symposium Digest., 4263854, pp. 479-482, 2007 IEEE MTT-S International Microwave Symposium, IMS 2007, Honolulu, HI, United States, 07/6/3. https://doi.org/10.1109/MWSYM.2007.380511

Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules. / Min, Byung-Wook; Rebeiz, Gabriel M.

2007 IEEE MTT-S International Microwave Symposium Digest. 2007. p. 479-482 4263854.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules

AU - Min, Byung-Wook

AU - Rebeiz, Gabriel M.

PY - 2007/10/2

Y1 - 2007/10/2

N2 - This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 μm SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1±1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7° 30-38 GHz. The total chip size is 900×400 μm2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.

AB - This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 μm SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1±1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7° 30-38 GHz. The total chip size is 900×400 μm2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.

UR - http://www.scopus.com/inward/record.url?scp=34748839678&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34748839678&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2007.380511

DO - 10.1109/MWSYM.2007.380511

M3 - Conference contribution

SN - 1424406889

SN - 9781424406883

SP - 479

EP - 482

BT - 2007 IEEE MTT-S International Microwave Symposium Digest

ER -

Min B-W, Rebeiz GM. Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules. In 2007 IEEE MTT-S International Microwave Symposium Digest. 2007. p. 479-482. 4263854 https://doi.org/10.1109/MWSYM.2007.380511