Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules

Byung Wook Min, Gabriel M. Rebeiz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 μm SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1±1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7° 30-38 GHz. The total chip size is 900×400 μm2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages479-482
Number of pages4
DOIs
Publication statusPublished - 2007 Oct 2
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 2007 Jun 32007 Jun 8

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period07/6/307/6/8

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Min, B. W., & Rebeiz, G. M. (2007). Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules. In 2007 IEEE MTT-S International Microwave Symposium Digest (pp. 479-482). [4263854] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2007.380511