Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization

Bosung Suh; Byung Wook Min

doi:10.1109/RFIC.2019.8701792

Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization

Bosung Suh, Byung Wook Min

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

An Ka-band absorptive single-pole four-throw (SP4T) switch in 28-nm CMOS process is presented. By capacitive matching and loading method, only four λ/6 transmission lines (t-line) are used for the proposed switch without additional series switches. The length of the t-line used in the proposed switch is only 1/3 of that of the quarter-wave t-line based absorptive switch. To improve switch performance, low threshold-voltage transistors and source and drain of transistors are biased for power handling capability. The measured insertion loss and isolation are 3.5 dB and 20 dB at 28 GHz. Return losses of on-state and off-state ports are less than-10 dB and-16 dB from 26 GHz to 33 GHz. The measured input 1-dB compression point is more than 15 dBm. The chip area is 0.53 mm² and electrical size is 0.0047×(λ_g)² excluding pads and internal matching circuits that is the smallest electrical size among the millimeter-wave CMOS absorptive SP4T switches.

Original language	English
Title of host publication	2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	11-14
Number of pages	4
ISBN (Electronic)	9781728117010
DOIs	https://doi.org/10.1109/RFIC.2019.8701792
Publication status	Published - 2019 Jun
Event	2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019 - Boston, United States Duration: 2019 Jun 2 → 2019 Jun 4

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume	2019-June
ISSN (Print)	1529-2517

Conference

Conference	2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019
Country/Territory	United States
City	Boston
Period	19/6/2 → 19/6/4

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by Yonsei-Samsung Research Center (YSSRC) and Space Core Technology Program through the NRF of Korea funded by the MSIT (NRF-2017M1A3A3A02016255). CAD softwares was supported by IDEC, and measurement equipments was supported by Rohde and Schwarz.

Publisher Copyright:
© 2019 IEEE.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/RFIC.2019.8701792

Cite this

Suh, B., & Min, B. W. (2019). Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization. In 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019 (pp. 11-14). [8701792] (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIC.2019.8701792

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title = "Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization",

abstract = "An Ka-band absorptive single-pole four-throw (SP4T) switch in 28-nm CMOS process is presented. By capacitive matching and loading method, only four λ/6 transmission lines (t-line) are used for the proposed switch without additional series switches. The length of the t-line used in the proposed switch is only 1/3 of that of the quarter-wave t-line based absorptive switch. To improve switch performance, low threshold-voltage transistors and source and drain of transistors are biased for power handling capability. The measured insertion loss and isolation are 3.5 dB and 20 dB at 28 GHz. Return losses of on-state and off-state ports are less than-10 dB and-16 dB from 26 GHz to 33 GHz. The measured input 1-dB compression point is more than 15 dBm. The chip area is 0.53 mm2 and electrical size is 0.0047×(λg)2 excluding pads and internal matching circuits that is the smallest electrical size among the millimeter-wave CMOS absorptive SP4T switches.",

author = "Bosung Suh and Min, {Byung Wook}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by Yonsei-Samsung Research Center (YSSRC) and Space Core Technology Program through the NRF of Korea funded by the MSIT (NRF-2017M1A3A3A02016255). CAD softwares was supported by IDEC, and measurement equipments was supported by Rohde and Schwarz. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019 ; Conference date: 02-06-2019 Through 04-06-2019",

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Suh, B & Min, BW 2019, Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization. in 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019., 8701792, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 11-14, 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019, Boston, United States, 19/6/2. https://doi.org/10.1109/RFIC.2019.8701792

Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization. / Suh, Bosung; Min, Byung Wook.

2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 11-14 8701792 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N1 - Funding Information: ACKNOWLEDGMENT This work was supported by Yonsei-Samsung Research Center (YSSRC) and Space Core Technology Program through the NRF of Korea funded by the MSIT (NRF-2017M1A3A3A02016255). CAD softwares was supported by IDEC, and measurement equipments was supported by Rohde and Schwarz. Publisher Copyright: © 2019 IEEE.

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N2 - An Ka-band absorptive single-pole four-throw (SP4T) switch in 28-nm CMOS process is presented. By capacitive matching and loading method, only four λ/6 transmission lines (t-line) are used for the proposed switch without additional series switches. The length of the t-line used in the proposed switch is only 1/3 of that of the quarter-wave t-line based absorptive switch. To improve switch performance, low threshold-voltage transistors and source and drain of transistors are biased for power handling capability. The measured insertion loss and isolation are 3.5 dB and 20 dB at 28 GHz. Return losses of on-state and off-state ports are less than-10 dB and-16 dB from 26 GHz to 33 GHz. The measured input 1-dB compression point is more than 15 dBm. The chip area is 0.53 mm2 and electrical size is 0.0047×(λg)2 excluding pads and internal matching circuits that is the smallest electrical size among the millimeter-wave CMOS absorptive SP4T switches.

AB - An Ka-band absorptive single-pole four-throw (SP4T) switch in 28-nm CMOS process is presented. By capacitive matching and loading method, only four λ/6 transmission lines (t-line) are used for the proposed switch without additional series switches. The length of the t-line used in the proposed switch is only 1/3 of that of the quarter-wave t-line based absorptive switch. To improve switch performance, low threshold-voltage transistors and source and drain of transistors are biased for power handling capability. The measured insertion loss and isolation are 3.5 dB and 20 dB at 28 GHz. Return losses of on-state and off-state ports are less than-10 dB and-16 dB from 26 GHz to 33 GHz. The measured input 1-dB compression point is more than 15 dBm. The chip area is 0.53 mm2 and electrical size is 0.0047×(λg)2 excluding pads and internal matching circuits that is the smallest electrical size among the millimeter-wave CMOS absorptive SP4T switches.

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Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization

Abstract

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