Ka-band SiGe HBT low noise amplifier design for simultaneous noise and input power matching

Byung Wook Min, Gabriel M. Rebeiz

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

This letter presents the design and implementation of a Ka-band low noise amplifier (LNA). The LNA is based on a cas-code amplifier using 0.12 μm SiGe heterojunction bipolar transistors (HBT). A new design procedure for simultaneous noise and input power matching is developed considering the collector-base feedback capacitance (C μ). At 33-34 GHz, the LNA results in a measured gain of 23.5 dB, a return loss of < - 20 dB and a noise figure (NF) of 2.9 dB. The input return loss is < - 10 dB and the NF is 2.6-3.2 dB for the entire Ka-band frequency range. The LNA is 300 × 300 μm 2, consuming 6 mA from 1.8 V supply (11 mW). The output 1 dB compression power is - 6 dBm. To our knowledge, these are state-of-the-art results and show the validity of the design technique.

Original languageEnglish
Pages (from-to)891-893
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

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amplifier design
Low noise amplifiers
Heterojunction bipolar transistors
bipolar transistors
low noise
heterojunctions
amplifiers
Noise figure
Frequency bands
Capacitance
accumulators
Feedback
frequency ranges
capacitance
output

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Ka-band SiGe HBT low noise amplifier design for simultaneous noise and input power matching. / Min, Byung Wook; Rebeiz, Gabriel M.

In: IEEE Microwave and Wireless Components Letters, Vol. 17, No. 12, 01.12.2007, p. 891-893.

Research output: Contribution to journalArticle

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