Ka-band SiGe HBT low noise amplifier design for simultaneous noise and input power matching

Byung Wook Min, Gabriel M. Rebeiz

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

This letter presents the design and implementation of a Ka-band low noise amplifier (LNA). The LNA is based on a cas-code amplifier using 0.12 μm SiGe heterojunction bipolar transistors (HBT). A new design procedure for simultaneous noise and input power matching is developed considering the collector-base feedback capacitance (C μ). At 33-34 GHz, the LNA results in a measured gain of 23.5 dB, a return loss of < - 20 dB and a noise figure (NF) of 2.9 dB. The input return loss is < - 10 dB and the NF is 2.6-3.2 dB for the entire Ka-band frequency range. The LNA is 300 × 300 μm 2, consuming 6 mA from 1.8 V supply (11 mW). The output 1 dB compression power is - 6 dBm. To our knowledge, these are state-of-the-art results and show the validity of the design technique.

Original languageEnglish
Pages (from-to)891-893
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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