Abstract
This letter presents the design and implementation of a differential Ka-band variable gain low noise amplifier (VG-LNA) with low insertion phase imbalance. The VG-LNA is based on a 0.12 μm SiGe heterojunction bipolar transistor process, and the gain variation is achieved using bias current steering. The measured VG-LNA gain at 32-34 GHz is 9-20 dB with eight different linear-in-magnitude gain states, and with a noise figure of 3.4-4.3 dB. The measured rms phase imbalance is < 2.5° at 26-40 GHz for all gain states and this is achieved using a novel compensating resistor in the bias network. The VG-LNA consumes 33 mW (13.5 mA, 2.5 V) and the input 1-dB gain compression point is -27 dBm. The chip size is 0.13 mm2 without pads.
| Original language | English |
|---|---|
| Article number | 4470112 |
| Pages (from-to) | 272-274 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 18 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2008 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
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Ka-band SiGe HBT low phase imbalance differential 3-bit variable gain LNA. / Min, Byung-Wook; Rebeiz, Gabriel M.
In: IEEE Microwave and Wireless Components Letters, Vol. 18, No. 4, 4470112, 01.04.2008, p. 272-274.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ka-band SiGe HBT low phase imbalance differential 3-bit variable gain LNA
AU - Min, Byung-Wook
AU - Rebeiz, Gabriel M.
PY - 2008/4/1
Y1 - 2008/4/1
N2 - This letter presents the design and implementation of a differential Ka-band variable gain low noise amplifier (VG-LNA) with low insertion phase imbalance. The VG-LNA is based on a 0.12 μm SiGe heterojunction bipolar transistor process, and the gain variation is achieved using bias current steering. The measured VG-LNA gain at 32-34 GHz is 9-20 dB with eight different linear-in-magnitude gain states, and with a noise figure of 3.4-4.3 dB. The measured rms phase imbalance is < 2.5° at 26-40 GHz for all gain states and this is achieved using a novel compensating resistor in the bias network. The VG-LNA consumes 33 mW (13.5 mA, 2.5 V) and the input 1-dB gain compression point is -27 dBm. The chip size is 0.13 mm2 without pads.
AB - This letter presents the design and implementation of a differential Ka-band variable gain low noise amplifier (VG-LNA) with low insertion phase imbalance. The VG-LNA is based on a 0.12 μm SiGe heterojunction bipolar transistor process, and the gain variation is achieved using bias current steering. The measured VG-LNA gain at 32-34 GHz is 9-20 dB with eight different linear-in-magnitude gain states, and with a noise figure of 3.4-4.3 dB. The measured rms phase imbalance is < 2.5° at 26-40 GHz for all gain states and this is achieved using a novel compensating resistor in the bias network. The VG-LNA consumes 33 mW (13.5 mA, 2.5 V) and the input 1-dB gain compression point is -27 dBm. The chip size is 0.13 mm2 without pads.
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U2 - 10.1109/LMWC.2008.918917
DO - 10.1109/LMWC.2008.918917
M3 - Article
VL - 18
SP - 272
EP - 274
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 4
M1 - 4470112
ER -