Ka-band SiGe HBT low phase imbalance differential 3-bit variable gain LNA

Byung-Wook Min, Gabriel M. Rebeiz

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

This letter presents the design and implementation of a differential Ka-band variable gain low noise amplifier (VG-LNA) with low insertion phase imbalance. The VG-LNA is based on a 0.12 μm SiGe heterojunction bipolar transistor process, and the gain variation is achieved using bias current steering. The measured VG-LNA gain at 32-34 GHz is 9-20 dB with eight different linear-in-magnitude gain states, and with a noise figure of 3.4-4.3 dB. The measured rms phase imbalance is < 2.5° at 26-40 GHz for all gain states and this is achieved using a novel compensating resistor in the bias network. The VG-LNA consumes 33 mW (13.5 mA, 2.5 V) and the input 1-dB gain compression point is -27 dBm. The chip size is 0.13 mm2 without pads.

Original languageEnglish
Article number4470112
Pages (from-to)272-274
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume18
Issue number4
DOIs
Publication statusPublished - 2008 Apr 1

Fingerprint

Low noise amplifiers
Heterojunction bipolar transistors
low noise
amplifiers
Bias currents
Noise figure
Resistors
Variable gain amplifiers
Networks (circuits)
bipolar transistors
resistors
heterojunctions
insertion
chips

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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Ka-band SiGe HBT low phase imbalance differential 3-bit variable gain LNA. / Min, Byung-Wook; Rebeiz, Gabriel M.

In: IEEE Microwave and Wireless Components Letters, Vol. 18, No. 4, 4470112, 01.04.2008, p. 272-274.

Research output: Contribution to journalArticle

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