We demonstrated the writing and reading of conducting nanobits on a NiO thin film deposited on Pt/TiO2/SiO2/Si substrates for a resistive random access memory (RRAM) application using conducting atomic force microscopy (CAFM) and Kelvin probe force microscopy (KFM). A Pt/NiO/Pt RRAM capacitor showed a typical unipolar switching behavior with bistable resistances. Conducting nanobits with diameters of 22nm written with a bias of 3.0V on the NiO thin film were observed with CAFM. The conducting nanobits observed by KFM exhibited negative potentials relative to the insulating regions when there was no bias at the Pt bottom electrode because image charges were induced by charges formed at the end of the KFM tip by the reference AC bias. Enhancement of the KFM signals for conducting nanobits was achieved using specific biases at the Pt bottom electrode, which provided clear KFM images for conducting nanobits.
|Publication status||Published - 2010|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering