Kinetic effect of additives in high temperature phosphoric acid on the etching of Si3N4/SiO2

Taegun Park; Taehyeon Kim; Changjin Son; Sangwoo Lim

doi:10.1149/09202.0149ecst

Kinetic effect of additives in high temperature phosphoric acid on the etching of Si₃N₄/SiO₂

Taegun Park, Taehyeon Kim, Changjin Son, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Highly selective etching of Si₃N₄ to SiO₂ in phosphoric acid is required for the 3D NAND integration. When a single wafer tool is introduced in this process, the process temperature needs to be well controlled. Therefore, the effect of various additives in phosphoric acid on the kinetics of the Si₃N₄ and SiO₂ etching reaction were investigated at a higher temperature up to 200 °C in this study. The etching rates of Si₃N₄ and SiO₂ increased whereas the activation energies decreased with the addition of either HF or NH₄F. As the concentration of HF is increased, the activation energies of Si3N4 and SiO₂ etching further decreased. On the other hand, Sicontaining additives increased the activation energy of SiO₂ etching while the activation energy of Si₃N₄ etching was unchanged.

Original language	English
Title of host publication	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
Editors	Koichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat
Publisher	Electrochemical Society Inc.
Pages	149-154
Number of pages	6
Edition	2
ISBN (Electronic)	9781607688761
ISBN (Print)	9781607688761
DOIs	https://doi.org/10.1149/09202.0149ecst
Publication status	Published - 2019
Event	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17

Publication series

Name	ECS Transactions
Number	2
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	19/10/13 → 19/10/17

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device.

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/09202.0149ecst

Cite this

Park, T., Kim, T., Son, C., & Lim, S. (2019). Kinetic effect of additives in high temperature phosphoric acid on the etching of Si₃N₄/SiO₂. In K. Saga, P. W. Mertens, T. Hattori, J. Ruzyllo, & A. J. Muscat (Eds.), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 (2 ed., pp. 149-154). (ECS Transactions; Vol. 92, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/09202.0149ecst

Park, Taegun ; Kim, Taehyeon ; Son, Changjin et al. / Kinetic effect of additives in high temperature phosphoric acid on the etching of Si₃N₄/SiO₂. 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. editor / Koichiro Saga ; Paul W. Mertens ; Takeshi Hattori ; Jerzy Ruzyllo ; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. pp. 149-154 (ECS Transactions; 2).

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abstract = "Highly selective etching of Si3N4 to SiO2 in phosphoric acid is required for the 3D NAND integration. When a single wafer tool is introduced in this process, the process temperature needs to be well controlled. Therefore, the effect of various additives in phosphoric acid on the kinetics of the Si3N4 and SiO2 etching reaction were investigated at a higher temperature up to 200 °C in this study. The etching rates of Si3N4 and SiO2 increased whereas the activation energies decreased with the addition of either HF or NH4F. As the concentration of HF is increased, the activation energies of Si3N4 and SiO2 etching further decreased. On the other hand, Sicontaining additives increased the activation energy of SiO2 etching while the activation energy of Si3N4 etching was unchanged.",

author = "Taegun Park and Taehyeon Kim and Changjin Son and Sangwoo Lim",

note = "Funding Information: This work was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device. Publisher Copyright: {\textcopyright} The Electrochemical Society.; 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",

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Park, T, Kim, T, Son, C & Lim, S 2019, Kinetic effect of additives in high temperature phosphoric acid on the etching of Si₃N₄/SiO₂. in K Saga, PW Mertens, T Hattori, J Ruzyllo & AJ Muscat (eds), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. 2 edn, ECS Transactions, no. 2, vol. 92, Electrochemical Society Inc., pp. 149-154, 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09202.0149ecst

Kinetic effect of additives in high temperature phosphoric acid on the etching of Si₃N₄/SiO₂. / Park, Taegun; Kim, Taehyeon; Son, Changjin et al.

16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. ed. / Koichiro Saga; Paul W. Mertens; Takeshi Hattori; Jerzy Ruzyllo; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. p. 149-154 (ECS Transactions; Vol. 92, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Park, Taegun

AU - Kim, Taehyeon

AU - Son, Changjin

AU - Lim, Sangwoo

N1 - Funding Information: This work was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device. Publisher Copyright: © The Electrochemical Society.

PY - 2019

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N2 - Highly selective etching of Si3N4 to SiO2 in phosphoric acid is required for the 3D NAND integration. When a single wafer tool is introduced in this process, the process temperature needs to be well controlled. Therefore, the effect of various additives in phosphoric acid on the kinetics of the Si3N4 and SiO2 etching reaction were investigated at a higher temperature up to 200 °C in this study. The etching rates of Si3N4 and SiO2 increased whereas the activation energies decreased with the addition of either HF or NH4F. As the concentration of HF is increased, the activation energies of Si3N4 and SiO2 etching further decreased. On the other hand, Sicontaining additives increased the activation energy of SiO2 etching while the activation energy of Si3N4 etching was unchanged.

AB - Highly selective etching of Si3N4 to SiO2 in phosphoric acid is required for the 3D NAND integration. When a single wafer tool is introduced in this process, the process temperature needs to be well controlled. Therefore, the effect of various additives in phosphoric acid on the kinetics of the Si3N4 and SiO2 etching reaction were investigated at a higher temperature up to 200 °C in this study. The etching rates of Si3N4 and SiO2 increased whereas the activation energies decreased with the addition of either HF or NH4F. As the concentration of HF is increased, the activation energies of Si3N4 and SiO2 etching further decreased. On the other hand, Sicontaining additives increased the activation energy of SiO2 etching while the activation energy of Si3N4 etching was unchanged.

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Park T, Kim T, Son C, Lim S. Kinetic effect of additives in high temperature phosphoric acid on the etching of Si₃N₄/SiO₂. In Saga K, Mertens PW, Hattori T, Ruzyllo J, Muscat AJ, editors, 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. 2 ed. Electrochemical Society Inc. 2019. p. 149-154. (ECS Transactions; 2). doi: 10.1149/09202.0149ecst