Abstract
Wet etching of Si3N4 was conducted in superheated water at 160 °C with different additives type and concentration. In general, etching rate of Si3N4 increased with the pH of solution. However, it is difficult to fully explain the Si3N4 etching behavior just with the pH of solution. The OHconcentration (or pH) in superheated water at 160 °C are different from the pH of solution at room temperature. Therefore, the OH-concentrations in superheated water at 160 °C were calculated using van’t Hoff equation, equilibrium constant equations, mass and charge balance equations. The calculated OH-concentration at 160 °C showed better correlation with Si3N4 etching rate than that of initial pH of solution.
| Original language | English |
|---|---|
| Title of host publication | Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 |
| Editors | Paul W. Mertens, Kurt Wostyn, Marc Meuris, Marc Heyns |
| Publisher | Trans Tech Publications Ltd |
| Pages | 113-118 |
| Number of pages | 6 |
| ISBN (Print) | 9783035738018 |
| DOIs | |
| Publication status | Published - 2021 |
| Event | 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 - Mechelen, Belgium Duration: 2021 Apr 12 → 2021 Apr 15 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 314 SSP |
| ISSN (Print) | 1012-0394 |
| ISSN (Electronic) | 1662-9779 |
Conference
| Conference | 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 |
|---|---|
| Country/Territory | Belgium |
| City | Mechelen |
| Period | 21/4/12 → 21/4/15 |
Bibliographical note
Publisher Copyright:© 2021 Trans Tech Publications Ltd, Switzerland.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics