Kinetic study on the si3n4 etching in superheated water

Changjin Son, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Wet etching of Si3N4 was conducted in superheated water at 160 °C with different additives type and concentration. In general, etching rate of Si3N4 increased with the pH of solution. However, it is difficult to fully explain the Si3N4 etching behavior just with the pH of solution. The OHconcentration (or pH) in superheated water at 160 °C are different from the pH of solution at room temperature. Therefore, the OH-concentrations in superheated water at 160 °C were calculated using van’t Hoff equation, equilibrium constant equations, mass and charge balance equations. The calculated OH-concentration at 160 °C showed better correlation with Si3N4 etching rate than that of initial pH of solution.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
EditorsPaul W. Mertens, Kurt Wostyn, Marc Meuris, Marc Heyns
PublisherTrans Tech Publications Ltd
Pages113-118
Number of pages6
ISBN (Print)9783035738018
DOIs
Publication statusPublished - 2021
Event15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 - Mechelen, Belgium
Duration: 2021 Apr 122021 Apr 15

Publication series

NameSolid State Phenomena
Volume314 SSP
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Conference

Conference15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
CountryBelgium
CityMechelen
Period21/4/1221/4/15

Bibliographical note

Publisher Copyright:
© 2021 Trans Tech Publications Ltd, Switzerland.

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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