This letter describes the physics and application of an approach to transfer printing that uses stamps with microstructures of relief embossed into their surfaces. Experimental measurement of velocity-dependent adhesive strength as a function of relief geometry reveals key scaling properties and provides a means for comparison to theoretical expectation. Formation of transistor devices that use nanoribbons of silicon transfer printed directly onto glass substrates without adhesive layers demonstrates the use of this type of approach for a high-performance (mobilities > 325 cm2 /V s and on/off ratios > 105) single crystal silicon on glass technology.
Bibliographical noteFunding Information:
We thank T. Banks for helping with e-beam lithography and processing using facilities at the Frederick Seitz Materials Research Laboratory (MRL). This work was supported in part by MURI Grant No. FA9550–08–1-0337. The general characterization facilities were provided through MRL with support from the University of Illinois and from DOE Grant Nos DE-FG02–07ER46453 and DE-FG02–07ER46471. T.-H.K. acknowledges the Korea Research Foundation Grant No. KRF-2006–214-D00044, funded by the Korean Government (MOEHRD). A.C. acknowledges support from the Department of Defense (DOD) through the National Defense Science and Engineering Graduate (NDSEG) Fellowship program. T.-H.K. and A.C. contributed equally to this work.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)