Kondo effect in magnetic tunnel junctions

K. I. Lee, S. J. Joo, J. H. Lee, K. Rhie, Tae Suk Kim, W. Y. Lee, K. H. Shin, B. C. Lee, P. Leclair, J. S. Lee, J. H. Park

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Abstract

Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30K.

Original languageEnglish
Article number107202
JournalPhysical Review Letters
Volume98
Issue number10
DOIs
Publication statusPublished - 2007 Mar 6

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, K. I., Joo, S. J., Lee, J. H., Rhie, K., Kim, T. S., Lee, W. Y., Shin, K. H., Lee, B. C., Leclair, P., Lee, J. S., & Park, J. H. (2007). Kondo effect in magnetic tunnel junctions. Physical Review Letters, 98(10), [107202]. https://doi.org/10.1103/PhysRevLett.98.107202