Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors

Min Je Kim, Young Min Heo, Jeong Ho Cho

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Field-effect transistors (FETs) based on solution-processed indium-gallium-zinc oxide (IGZO) exhibited excellent electrical properties, including a high carrier mobility over 1 cm2/V s and an on/off current ratio over 107. Solution-processable gate dielectric materials with excellent electrical strength were required instead of inorganic oxide gate dielectrics such as SiO2, Al2O3, and HfO2. In this manuscript, we demonstrated the use of a ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer as a gate dielectric in IGZO FETs. Methacryloxypropyl groups in the copolymer were introduced to crosslink the polymer chains via thermal annealing. Thermal annealing at 200 °C enhanced the electrical strength of the gate dielectric layer because of the formation of a network structure with a reduced free volume. The resulting IGZO FETs based on 200 °C-annealed ladder-type PPMSQ gate dielectrics exhibited an electron mobility of 1.2 (±0.05) cm2/V s, a threshold voltage of 17 (±2) V, and an on/off current ratio of 1.5 (±0.7) × 108. The use of the polymeric ladder-type PPMSQ gate dielectrics for gating the IGZO FETs provided a novel approach to realizing future flexible electronics.

Original languageEnglish
Pages (from-to)41-46
Number of pages6
JournalOrganic Electronics
Volume43
DOIs
Publication statusPublished - 2017 Apr 1

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Gate dielectrics
Ladders
Field effect transistors
Zinc oxide
ladders
zinc oxides
indium
copolymers
field effect transistors
Copolymers
Annealing
Flexible electronics
annealing
Electron mobility
Carrier mobility
Free volume

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{8b7274a7fe10465d878c6a3794e0f184,
title = "Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors",
abstract = "Field-effect transistors (FETs) based on solution-processed indium-gallium-zinc oxide (IGZO) exhibited excellent electrical properties, including a high carrier mobility over 1 cm2/V s and an on/off current ratio over 107. Solution-processable gate dielectric materials with excellent electrical strength were required instead of inorganic oxide gate dielectrics such as SiO2, Al2O3, and HfO2. In this manuscript, we demonstrated the use of a ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer as a gate dielectric in IGZO FETs. Methacryloxypropyl groups in the copolymer were introduced to crosslink the polymer chains via thermal annealing. Thermal annealing at 200 °C enhanced the electrical strength of the gate dielectric layer because of the formation of a network structure with a reduced free volume. The resulting IGZO FETs based on 200 °C-annealed ladder-type PPMSQ gate dielectrics exhibited an electron mobility of 1.2 (±0.05) cm2/V s, a threshold voltage of 17 (±2) V, and an on/off current ratio of 1.5 (±0.7) × 108. The use of the polymeric ladder-type PPMSQ gate dielectrics for gating the IGZO FETs provided a novel approach to realizing future flexible electronics.",
author = "Kim, {Min Je} and Heo, {Young Min} and Cho, {Jeong Ho}",
year = "2017",
month = "4",
day = "1",
doi = "10.1016/j.orgel.2017.01.009",
language = "English",
volume = "43",
pages = "41--46",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",

}

Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors. / Kim, Min Je; Heo, Young Min; Cho, Jeong Ho.

In: Organic Electronics, Vol. 43, 01.04.2017, p. 41-46.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors

AU - Kim, Min Je

AU - Heo, Young Min

AU - Cho, Jeong Ho

PY - 2017/4/1

Y1 - 2017/4/1

N2 - Field-effect transistors (FETs) based on solution-processed indium-gallium-zinc oxide (IGZO) exhibited excellent electrical properties, including a high carrier mobility over 1 cm2/V s and an on/off current ratio over 107. Solution-processable gate dielectric materials with excellent electrical strength were required instead of inorganic oxide gate dielectrics such as SiO2, Al2O3, and HfO2. In this manuscript, we demonstrated the use of a ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer as a gate dielectric in IGZO FETs. Methacryloxypropyl groups in the copolymer were introduced to crosslink the polymer chains via thermal annealing. Thermal annealing at 200 °C enhanced the electrical strength of the gate dielectric layer because of the formation of a network structure with a reduced free volume. The resulting IGZO FETs based on 200 °C-annealed ladder-type PPMSQ gate dielectrics exhibited an electron mobility of 1.2 (±0.05) cm2/V s, a threshold voltage of 17 (±2) V, and an on/off current ratio of 1.5 (±0.7) × 108. The use of the polymeric ladder-type PPMSQ gate dielectrics for gating the IGZO FETs provided a novel approach to realizing future flexible electronics.

AB - Field-effect transistors (FETs) based on solution-processed indium-gallium-zinc oxide (IGZO) exhibited excellent electrical properties, including a high carrier mobility over 1 cm2/V s and an on/off current ratio over 107. Solution-processable gate dielectric materials with excellent electrical strength were required instead of inorganic oxide gate dielectrics such as SiO2, Al2O3, and HfO2. In this manuscript, we demonstrated the use of a ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer as a gate dielectric in IGZO FETs. Methacryloxypropyl groups in the copolymer were introduced to crosslink the polymer chains via thermal annealing. Thermal annealing at 200 °C enhanced the electrical strength of the gate dielectric layer because of the formation of a network structure with a reduced free volume. The resulting IGZO FETs based on 200 °C-annealed ladder-type PPMSQ gate dielectrics exhibited an electron mobility of 1.2 (±0.05) cm2/V s, a threshold voltage of 17 (±2) V, and an on/off current ratio of 1.5 (±0.7) × 108. The use of the polymeric ladder-type PPMSQ gate dielectrics for gating the IGZO FETs provided a novel approach to realizing future flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=85009181382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009181382&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2017.01.009

DO - 10.1016/j.orgel.2017.01.009

M3 - Article

AN - SCOPUS:85009181382

VL - 43

SP - 41

EP - 46

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

ER -