Ladder-Type Silsesquioxane Copolymer Gate Dielectrics for High-Performance Organic Transistors and Inverters

Woonggi Kang, Gukil An, Min Je Kim, Wi Hyoung Lee, Dong Yun Lee, Hyunjung Kim, Jeong Ho Cho

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer was developed for use as a gate dielectric in high-performance organic field-effect transistors (OFETs). The ladder-type PPMSQ copolymer was synthesized via the hydrolysis of two types of monomers, methacryloxypropyltrimethoxysilane and phenyltrimethoxysilane, followed by a condensation polymerization. The phenyl groups in one monomer were introduced to enhance the structural ordering of the overlying organic semiconductors, whereas the methacryloxypropyl groups in the other monomer were introduced to cross-link the polymer chains via thermal- or photocuring. The curing process enhanced the electrical strength of the gate dielectric layer due to the formation of a network structure with a reduced free volume. Thermal curing reduced the surface energy of the gate dielectrics, which improved the structural order of the overlying organic semiconductors and promoted the formation of large grains. The ladder-type PPMSQ was used as a gate dielectric to produce benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited excellent electrical performances, including a high carrier mobility (0.53 cm 2 V -1 s -1 for the p-type pentacene OFET and 0.17 cm 2 V -1 s -1 for the n-type PTCDI-C 8 OFET) and a high ON/OFF current ratio exceeding 10 4 . The photocured patterned PPMSQ film was successfully used to fabricate complementary OFET-based inverters that yielded high gains. The use of the ladder-type PPMSQ gate dielectrics provides a novel approach to realizing next-generation organic electronics.

Original languageEnglish
Pages (from-to)3501-3508
Number of pages8
JournalJournal of Physical Chemistry C
Volume120
Issue number6
DOIs
Publication statusPublished - 2016 Feb 18

Fingerprint

Organic field effect transistors
inverters
Gate dielectrics
Ladders
ladders
copolymers
Transistors
transistors
field effect transistors
Copolymers
Semiconducting organic compounds
monomers
Monomers
organic semiconductors
curing
Curing
Carrier mobility
Free volume
Polycondensation
carrier mobility

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Kang, Woonggi ; An, Gukil ; Kim, Min Je ; Lee, Wi Hyoung ; Lee, Dong Yun ; Kim, Hyunjung ; Cho, Jeong Ho. / Ladder-Type Silsesquioxane Copolymer Gate Dielectrics for High-Performance Organic Transistors and Inverters. In: Journal of Physical Chemistry C. 2016 ; Vol. 120, No. 6. pp. 3501-3508.
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abstract = "A ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer was developed for use as a gate dielectric in high-performance organic field-effect transistors (OFETs). The ladder-type PPMSQ copolymer was synthesized via the hydrolysis of two types of monomers, methacryloxypropyltrimethoxysilane and phenyltrimethoxysilane, followed by a condensation polymerization. The phenyl groups in one monomer were introduced to enhance the structural ordering of the overlying organic semiconductors, whereas the methacryloxypropyl groups in the other monomer were introduced to cross-link the polymer chains via thermal- or photocuring. The curing process enhanced the electrical strength of the gate dielectric layer due to the formation of a network structure with a reduced free volume. Thermal curing reduced the surface energy of the gate dielectrics, which improved the structural order of the overlying organic semiconductors and promoted the formation of large grains. The ladder-type PPMSQ was used as a gate dielectric to produce benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited excellent electrical performances, including a high carrier mobility (0.53 cm 2 V -1 s -1 for the p-type pentacene OFET and 0.17 cm 2 V -1 s -1 for the n-type PTCDI-C 8 OFET) and a high ON/OFF current ratio exceeding 10 4 . The photocured patterned PPMSQ film was successfully used to fabricate complementary OFET-based inverters that yielded high gains. The use of the ladder-type PPMSQ gate dielectrics provides a novel approach to realizing next-generation organic electronics.",
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Ladder-Type Silsesquioxane Copolymer Gate Dielectrics for High-Performance Organic Transistors and Inverters. / Kang, Woonggi; An, Gukil; Kim, Min Je; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Hyunjung; Cho, Jeong Ho.

In: Journal of Physical Chemistry C, Vol. 120, No. 6, 18.02.2016, p. 3501-3508.

Research output: Contribution to journalArticle

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T1 - Ladder-Type Silsesquioxane Copolymer Gate Dielectrics for High-Performance Organic Transistors and Inverters

AU - Kang, Woonggi

AU - An, Gukil

AU - Kim, Min Je

AU - Lee, Wi Hyoung

AU - Lee, Dong Yun

AU - Kim, Hyunjung

AU - Cho, Jeong Ho

PY - 2016/2/18

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N2 - A ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer was developed for use as a gate dielectric in high-performance organic field-effect transistors (OFETs). The ladder-type PPMSQ copolymer was synthesized via the hydrolysis of two types of monomers, methacryloxypropyltrimethoxysilane and phenyltrimethoxysilane, followed by a condensation polymerization. The phenyl groups in one monomer were introduced to enhance the structural ordering of the overlying organic semiconductors, whereas the methacryloxypropyl groups in the other monomer were introduced to cross-link the polymer chains via thermal- or photocuring. The curing process enhanced the electrical strength of the gate dielectric layer due to the formation of a network structure with a reduced free volume. Thermal curing reduced the surface energy of the gate dielectrics, which improved the structural order of the overlying organic semiconductors and promoted the formation of large grains. The ladder-type PPMSQ was used as a gate dielectric to produce benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited excellent electrical performances, including a high carrier mobility (0.53 cm 2 V -1 s -1 for the p-type pentacene OFET and 0.17 cm 2 V -1 s -1 for the n-type PTCDI-C 8 OFET) and a high ON/OFF current ratio exceeding 10 4 . The photocured patterned PPMSQ film was successfully used to fabricate complementary OFET-based inverters that yielded high gains. The use of the ladder-type PPMSQ gate dielectrics provides a novel approach to realizing next-generation organic electronics.

AB - A ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer was developed for use as a gate dielectric in high-performance organic field-effect transistors (OFETs). The ladder-type PPMSQ copolymer was synthesized via the hydrolysis of two types of monomers, methacryloxypropyltrimethoxysilane and phenyltrimethoxysilane, followed by a condensation polymerization. The phenyl groups in one monomer were introduced to enhance the structural ordering of the overlying organic semiconductors, whereas the methacryloxypropyl groups in the other monomer were introduced to cross-link the polymer chains via thermal- or photocuring. The curing process enhanced the electrical strength of the gate dielectric layer due to the formation of a network structure with a reduced free volume. Thermal curing reduced the surface energy of the gate dielectrics, which improved the structural order of the overlying organic semiconductors and promoted the formation of large grains. The ladder-type PPMSQ was used as a gate dielectric to produce benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited excellent electrical performances, including a high carrier mobility (0.53 cm 2 V -1 s -1 for the p-type pentacene OFET and 0.17 cm 2 V -1 s -1 for the n-type PTCDI-C 8 OFET) and a high ON/OFF current ratio exceeding 10 4 . The photocured patterned PPMSQ film was successfully used to fabricate complementary OFET-based inverters that yielded high gains. The use of the ladder-type PPMSQ gate dielectrics provides a novel approach to realizing next-generation organic electronics.

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