Abstract
A ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer was developed for use as a gate dielectric in high-performance organic field-effect transistors (OFETs). The ladder-type PPMSQ copolymer was synthesized via the hydrolysis of two types of monomers, methacryloxypropyltrimethoxysilane and phenyltrimethoxysilane, followed by a condensation polymerization. The phenyl groups in one monomer were introduced to enhance the structural ordering of the overlying organic semiconductors, whereas the methacryloxypropyl groups in the other monomer were introduced to cross-link the polymer chains via thermal- or photocuring. The curing process enhanced the electrical strength of the gate dielectric layer due to the formation of a network structure with a reduced free volume. Thermal curing reduced the surface energy of the gate dielectrics, which improved the structural order of the overlying organic semiconductors and promoted the formation of large grains. The ladder-type PPMSQ was used as a gate dielectric to produce benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited excellent electrical performances, including a high carrier mobility (0.53 cm 2 V -1 s -1 for the p-type pentacene OFET and 0.17 cm 2 V -1 s -1 for the n-type PTCDI-C 8 OFET) and a high ON/OFF current ratio exceeding 10 4 . The photocured patterned PPMSQ film was successfully used to fabricate complementary OFET-based inverters that yielded high gains. The use of the ladder-type PPMSQ gate dielectrics provides a novel approach to realizing next-generation organic electronics.
| Original language | English |
|---|---|
| Pages (from-to) | 3501-3508 |
| Number of pages | 8 |
| Journal | Journal of Physical Chemistry C |
| Volume | 120 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2016 Feb 18 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
Cite this
}
Ladder-Type Silsesquioxane Copolymer Gate Dielectrics for High-Performance Organic Transistors and Inverters. / Kang, Woonggi; An, Gukil; Kim, Min Je; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Hyunjung; Cho, Jeong Ho.
In: Journal of Physical Chemistry C, Vol. 120, No. 6, 18.02.2016, p. 3501-3508.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ladder-Type Silsesquioxane Copolymer Gate Dielectrics for High-Performance Organic Transistors and Inverters
AU - Kang, Woonggi
AU - An, Gukil
AU - Kim, Min Je
AU - Lee, Wi Hyoung
AU - Lee, Dong Yun
AU - Kim, Hyunjung
AU - Cho, Jeong Ho
PY - 2016/2/18
Y1 - 2016/2/18
N2 - A ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer was developed for use as a gate dielectric in high-performance organic field-effect transistors (OFETs). The ladder-type PPMSQ copolymer was synthesized via the hydrolysis of two types of monomers, methacryloxypropyltrimethoxysilane and phenyltrimethoxysilane, followed by a condensation polymerization. The phenyl groups in one monomer were introduced to enhance the structural ordering of the overlying organic semiconductors, whereas the methacryloxypropyl groups in the other monomer were introduced to cross-link the polymer chains via thermal- or photocuring. The curing process enhanced the electrical strength of the gate dielectric layer due to the formation of a network structure with a reduced free volume. Thermal curing reduced the surface energy of the gate dielectrics, which improved the structural order of the overlying organic semiconductors and promoted the formation of large grains. The ladder-type PPMSQ was used as a gate dielectric to produce benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited excellent electrical performances, including a high carrier mobility (0.53 cm 2 V -1 s -1 for the p-type pentacene OFET and 0.17 cm 2 V -1 s -1 for the n-type PTCDI-C 8 OFET) and a high ON/OFF current ratio exceeding 10 4 . The photocured patterned PPMSQ film was successfully used to fabricate complementary OFET-based inverters that yielded high gains. The use of the ladder-type PPMSQ gate dielectrics provides a novel approach to realizing next-generation organic electronics.
AB - A ladder-type poly(phenyl-co-methacryl silsesquioxane) (PPMSQ) copolymer was developed for use as a gate dielectric in high-performance organic field-effect transistors (OFETs). The ladder-type PPMSQ copolymer was synthesized via the hydrolysis of two types of monomers, methacryloxypropyltrimethoxysilane and phenyltrimethoxysilane, followed by a condensation polymerization. The phenyl groups in one monomer were introduced to enhance the structural ordering of the overlying organic semiconductors, whereas the methacryloxypropyl groups in the other monomer were introduced to cross-link the polymer chains via thermal- or photocuring. The curing process enhanced the electrical strength of the gate dielectric layer due to the formation of a network structure with a reduced free volume. Thermal curing reduced the surface energy of the gate dielectrics, which improved the structural order of the overlying organic semiconductors and promoted the formation of large grains. The ladder-type PPMSQ was used as a gate dielectric to produce benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited excellent electrical performances, including a high carrier mobility (0.53 cm 2 V -1 s -1 for the p-type pentacene OFET and 0.17 cm 2 V -1 s -1 for the n-type PTCDI-C 8 OFET) and a high ON/OFF current ratio exceeding 10 4 . The photocured patterned PPMSQ film was successfully used to fabricate complementary OFET-based inverters that yielded high gains. The use of the ladder-type PPMSQ gate dielectrics provides a novel approach to realizing next-generation organic electronics.
UR - http://www.scopus.com/inward/record.url?scp=84959017674&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959017674&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.5b10240
DO - 10.1021/acs.jpcc.5b10240
M3 - Article
VL - 120
SP - 3501
EP - 3508
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 6
ER -