LaOx thin film deposited by direct liquid injection MOCVD

Jino Jun, Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume6
Issue number5
DOIs
Publication statusPublished - 2003 May 1

Fingerprint

liquid injection
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
gas flow
Flow of gases
Thin films
flow velocity
Flow rate
Liquids
Oxygen
thin films
oxygen
Leakage currents
leakage
Permittivity
Current density
vapor deposition
Annealing
permittivity
current density

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

@article{52ef2b4d62034c5da5be6c7fbba99b4d,
title = "LaOx thin film deposited by direct liquid injection MOCVD",
abstract = "The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.",
author = "Jino Jun and Jun, {Jin Hyung} and Choi, {Doo Jin}",
year = "2003",
month = "5",
day = "1",
doi = "10.1149/1.1561284",
language = "English",
volume = "6",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

LaOx thin film deposited by direct liquid injection MOCVD. / Jun, Jino; Jun, Jin Hyung; Choi, Doo Jin.

In: Electrochemical and Solid-State Letters, Vol. 6, No. 5, 01.05.2003.

Research output: Contribution to journalArticle

TY - JOUR

T1 - LaOx thin film deposited by direct liquid injection MOCVD

AU - Jun, Jino

AU - Jun, Jin Hyung

AU - Choi, Doo Jin

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.

AB - The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.

UR - http://www.scopus.com/inward/record.url?scp=0038711877&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038711877&partnerID=8YFLogxK

U2 - 10.1149/1.1561284

DO - 10.1149/1.1561284

M3 - Article

VL - 6

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 5

ER -