LaOx thin film deposited by direct liquid injection MOCVD

Jino Jun, Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume6
Issue number5
DOIs
Publication statusPublished - 2003 May 1

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

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