Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

Steve Park; Gregory Pitner; Gaurav Giri; Ja Hoon Koo; Joonsuk Park; Kwanpyo Kim; Huiliang Wang; Robert Sinclair; H. S.Philip Wong; Zhenan Bao

doi:10.1002/adma.201405289

Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

Steve Park, Gregory Pitner, Gaurav Giri, Ja Hoon Koo, Joonsuk Park, Kwanpyo Kim, Huiliang Wang, Robert Sinclair, H. S.Philip Wong, Zhenan Bao

Department of Physics

Research output: Contribution to journal › Article

83 Citations (Scopus)

Abstract

Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micrometer is achieved with a current density of 10.08 μA μm^-1 at V_DS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.

Original language	English
Pages (from-to)	2656-2662
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	16
DOIs	https://doi.org/10.1002/adma.201405289
Publication status	Published - 2015 Apr 24

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All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

Park, S., Pitner, G., Giri, G., Koo, J. H., Park, J., Kim, K., Wang, H., Sinclair, R., Wong, H. S. P., & Bao, Z. (2015). Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors. Advanced Materials, 27(16), 2656-2662. https://doi.org/10.1002/adma.201405289

Park, Steve ; Pitner, Gregory ; Giri, Gaurav ; Koo, Ja Hoon ; Park, Joonsuk ; Kim, Kwanpyo ; Wang, Huiliang ; Sinclair, Robert ; Wong, H. S.Philip ; Bao, Zhenan. / Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors. In: Advanced Materials. 2015 ; Vol. 27, No. 16. pp. 2656-2662.

@article{b0134d02e0f94985a75b44b92f4d90b2,

title = "Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors",

abstract = "Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micrometer is achieved with a current density of 10.08 μA μm-1 at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.",

author = "Steve Park and Gregory Pitner and Gaurav Giri and Koo, {Ja Hoon} and Joonsuk Park and Kwanpyo Kim and Huiliang Wang and Robert Sinclair and Wong, {H. S.Philip} and Zhenan Bao",

year = "2015",

month = apr,

day = "24",

doi = "10.1002/adma.201405289",

language = "English",

volume = "27",

pages = "2656--2662",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "16",

}

Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors. / Park, Steve; Pitner, Gregory; Giri, Gaurav; Koo, Ja Hoon; Park, Joonsuk; Kim, Kwanpyo; Wang, Huiliang; Sinclair, Robert; Wong, H. S.Philip; Bao, Zhenan.

In: Advanced Materials, Vol. 27, No. 16, 24.04.2015, p. 2656-2662.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

AU - Park, Steve

AU - Pitner, Gregory

AU - Giri, Gaurav

AU - Koo, Ja Hoon

AU - Park, Joonsuk

AU - Kim, Kwanpyo

AU - Wang, Huiliang

AU - Sinclair, Robert

AU - Wong, H. S.Philip

AU - Bao, Zhenan

PY - 2015/4/24

Y1 - 2015/4/24

N2 - Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micrometer is achieved with a current density of 10.08 μA μm-1 at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.

AB - Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micrometer is achieved with a current density of 10.08 μA μm-1 at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.

UR - http://www.scopus.com/inward/record.url?scp=85027939206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027939206&partnerID=8YFLogxK

U2 - 10.1002/adma.201405289

DO - 10.1002/adma.201405289

M3 - Article

AN - SCOPUS:85027939206

VL - 27

SP - 2656

EP - 2662

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 16

ER -

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10.1002/adma.201405289