Abstract
We demonstrated the fabrication of large-area ReS2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS2 transistors with graphene electrodes decreased dramatically compared with the SiO2-devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm2/(V s) and an on/off current ratio exceeding 104. NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.
Original language | English |
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Pages (from-to) | 2999-3005 |
Number of pages | 7 |
Journal | Nano letters |
Volume | 17 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2017 May 10 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering